公开(公告)号：US20170320435A1

公开(公告)日：2017-11-09

申请号：US15658056

申请日：2017-07-24

申请人： Dae Kwon CHUNG

发明人： Dae Kwon CHUNG

IPC分类号： B60R1/00 ,  B60Q9/00 ,  B60R11/04 ,  H04N5/225 ,  H04W84/12 ,  B60R11/00

CPC分类号： B60R1/00 ,  B60Q9/002 ,  B60R11/04 ,  B60R2011/004 ,  B60R2300/20 ,  B60R2300/406 ,  B60R2300/806 ,  H04N5/2253 ,  H04W84/12

摘要： A WiFi wireless rear view parking system comprises a main body, a camera sensor, a Wifi transmission module, a mobile personal electronic device, and a switch. The main body is installed at a license plate of an automobile. The camera sensor is provided in the main body for sensing images and video of rear regions of the automobile and generating images and video data. The Wifi transmission module transmits the image and video data from the camera. The mobile personal electronic device is for receiving image and video data transmitted by the Wifi transmission module and displaying them. The switch is provided in the display device or the mobile personal electronic device and configured for switching orientation of a view by flipping reverse and non-reverse, wherein the view is displayed on the mobile personal electronic device. The WiFi wireless rear view parking system provides rear view of the automobile to a driver. The mobile personal electronic device includes a smartphone.

公开(公告)号：US08673711B2

公开(公告)日：2014-03-18

申请号：US13240217

申请日：2011-09-22

申请人： WeonHong Kim ,  Dae-Kwon Joo ,  Hajin Lim ,  Jinho Do ,  Kyungil Hong ,  Moonkyun Song

发明人： WeonHong Kim ,  Dae-Kwon Joo ,  Hajin Lim ,  Jinho Do ,  Kyungil Hong ,  Moonkyun Song

IPC分类号： H01L21/8238 ,  H01L21/4763

CPC分类号： H01L29/512 ,  H01L21/28202 ,  H01L21/28255 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.

摘要翻译： 制造半导体器件的方法包括在半导体层上形成下界面层，下界面层为氮化物层，在下界面层上形成中间界面层，中间界面层为氧化物层，形成 中间界面层上的高k电介质层。 高k电介质层的介电常数高于下界面层和中间界面层的介电常数。

公开(公告)号：US08563411B2

公开(公告)日：2013-10-22

申请号：US13191948

申请日：2011-07-27

申请人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

发明人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC分类号： H01L21/3205

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4966

摘要： Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

公开(公告)号：US20110306171A1

公开(公告)日：2011-12-15

申请号：US13105652

申请日：2011-05-11

申请人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

发明人： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC分类号： H01L21/8238 ,  H01L21/28

CPC分类号： H01L21/823857 ,  H01L21/28202 ,  H01L29/518

摘要： An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively.

摘要翻译： 在其上限定有NMOS区和PMOS区的基板上形成绝缘层。 在PMOS区域中的绝缘层上形成第一导电层，使NMOS区域中的绝缘层的一部分露出。 进行氮化，以在NMOS区域中的绝缘层中产生第一氮浓度，并且在PMOS区域中的绝缘层中小于第一氮浓度的第二氮浓度。 第二导电层形成在绝缘层上，并且第一导电层以及第一和第二导电层和绝缘层被图案化以分别在NMOS区域和PMOS区域中形成第一栅极结构和第二栅极结构。

公开(公告)号：US20110175141A1

公开(公告)日：2011-07-21

申请号：US12964173

申请日：2010-12-09

申请人： Hajin LIM ,  Myungsun Kim ,  Hoi Sung Chung ,  Jinho Do ,  Weonhong Kim ,  Moonkyun Song ,  Dae-Kwon Joo

发明人： Hajin LIM ,  Myungsun Kim ,  Hoi Sung Chung ,  Jinho Do ,  Weonhong Kim ,  Moonkyun Song ,  Dae-Kwon Joo

IPC分类号： H01L29/04 ,  H01L29/78 ,  H01L21/20

CPC分类号： H01L21/823807 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/66651 ,  H01L29/78

摘要： A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern.

摘要翻译： 一种半导体器件，包括布置在半导体衬底的预定区域上以限定有源区的器件隔离层，所述有源区包括（100）晶面的中心顶表面和从中心顶表面延伸的倾斜边缘表面 到所述器件隔离层，覆盖所述有源区的中心顶表面和倾斜边缘表面的半导体图案，所述半导体图案包括与所述有源区的中心顶表面平行的（100）晶面的平坦顶表面 区域和基本上垂直于平坦顶表面的侧壁以及与半导体图案重叠的栅极图案。

公开(公告)号：US20090019964A1

公开(公告)日：2009-01-22

申请号：US12175682

申请日：2008-07-18

申请人： Young Dae Kwon

发明人： Young Dae Kwon

IPC分类号： F16C1/10

CPC分类号： F16C1/265 ,  F16C1/105 ,  F16C1/108 ,  Y10T74/20402 ,  Y10T74/20426 ,  Y10T74/2045 ,  Y10T74/20456 ,  Y10T74/20462 ,  Y10T403/40 ,  Y10T403/45

摘要： A motion transmitting remote control assembly (20) of the type for transmitting motion in a curved path by a flexible core element (22) in a conduit (24) is secured to a support structure (76) having a U-shaped slot. A coupling body (36) surrounds the core element (22) and is surrounded by a support body (66) for attachment to the support structure (76). A flange (42) extends radially about the coupling body (36) and is disposed axially between a first and second ends (38, 40) of the coupling body (36). First and second isolators (52, 54) surround the coupling body (36) on opposite sides of the flange (42) and include first and second ribs (63, 64) projecting radially from first and second head portions (61, 62) of the isolators (52, 54). The first and second ribs (63, 64) contact an inner radial surface (122) of the support body (66) thereby spacing the first and second head portions (61, 62) from the support body (66).

摘要翻译： 用于通过管道（24）中的柔性芯元件（22）在弯曲路径中传递运动的类型的运动发射遥控组件（20）固定到具有U形槽的支撑结构（76）。 联接体（36）围绕着芯体元件（22）并且由用于附接到支撑结构（76）的支撑体（66）包围。 凸缘（42）围绕联接体（36）径向延伸并且轴向设置在联接体（36）的第一和第二端（38,40）之间。 第一和第二隔离器（52,54）在凸缘（42）的相对侧围绕联接体（36），并包括从第一和第二头部（61,62）径向突出的第一和第二肋（63,64） 隔离器（52,54）。 第一和第二肋（63,64）接触支撑体（66）的内部径向表面（122），从而将第一和第二头部（61,62）与支撑体（66）隔​​开。

公开(公告)号：US20090014807A1

公开(公告)日：2009-01-15

申请号：US11777290

申请日：2007-07-13

申请人： Teck Jung TANG ,  Dae Kwon Kang ,  Sunfei Fang ,  Tae Hoon Lee ,  Scott D. Allen ,  Fang Chen ,  Frank Huebinger ,  Jun Jung Kim ,  Jae Eun Park

发明人： Teck Jung TANG ,  Dae Kwon Kang ,  Sunfei Fang ,  Tae Hoon Lee ,  Scott D. Allen ,  Fang Chen ,  Frank Huebinger ,  Jun Jung Kim ,  Jae Eun Park

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/665 ,  H01L29/7843

摘要： Dual stress liners for CMOS applications are provided. The dual stress liners can be formed from silicon nitride having a first portion for inducing a first stress and a second portion for inducing a second stress. An interface between the first and second stress portions is self-aligned and co-planar. To produce a co-planar self-aligned interface, polishing, for example, mechanical chemical polishing is used.

摘要翻译： 提供用于CMOS应用的双重应力衬垫。 双重应力衬垫可以由具有用于诱发第一应力的第一部分的氮化硅和用于引起第二应力的第二部分形成。 第一和第二应力部分之间的界面是自对准的并且是共面的。 为了产生共面自对准界面，使用例如机械化学抛光进行抛光。

公开(公告)号：US20080029823A1

公开(公告)日：2008-02-07

申请号：US11870573

申请日：2007-10-11

申请人： Jae-Eon Park ,  Ja-Hum Ku ,  Jun-Jung Kim ,  Dae-Kwon Kang ,  Young Teh

发明人： Jae-Eon Park ,  Ja-Hum Ku ,  Jun-Jung Kim ,  Dae-Kwon Kang ,  Young Teh

IPC分类号： H01L29/94 ,  G21G5/00

CPC分类号： H01L21/823807 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/268 ,  H01L21/3185 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823864 ,  H01L29/7843

摘要： In a semiconductor device having a dual stress liner for improving electron mobility, the dual stress liner includes a first liner portion formed on a PMOSFET and a second liner portion formed on an NMOSFET. The first liner portion has a first compressive stress, and the second liner portion has a second compressive stress smaller than the first compressive stress. The dual stress liner may be formed by forming a stress liner on a semiconductor substrate on which the PMOSFET and the NMOSFET are formed and selectively exposing a portion of the stress liner on the NMOSFET.

摘要翻译： 在具有用于改善电子迁移率的双应力衬垫的半导体器件中，双应力衬垫包括形成在PMOSFET上的第一衬垫部分和形成在NMOSFET上的第二衬垫部分。 第一衬里部分具有第一压缩应力，并且第二衬套部分具有小于第一压缩应力的第二压缩应力。 双应力衬垫可以通过在其上形成PMOSFET和NMOSFET的半导体衬底上形成应力衬垫而形成，并且选择性地暴露在NMOSFET上的应力衬垫的一部分。

公开(公告)号：US20070247078A1

公开(公告)日：2007-10-25

申请号：US11521606

申请日：2006-09-15

申请人： Young-Dae Kwon

发明人： Young-Dae Kwon

IPC分类号： H05B37/00 ,  H05B39/00

CPC分类号： H02M1/08 ,  H03K17/6871 ,  H03K2217/0036

摘要： The present invention relates to an electric power saving apparatus wherein light energy is irradiated to a semiconductor device, with the light energy emitted when a voltage is supplied to a transmission line, such that the wavelengths of the electrons on the transmission line, along which a load-driving current flows are elongated, and the spin motions and vibration states of the electrons are stabilized, thereby reducing the collision of electrons in order to reduce the loss of energy, and wherein the light energy irradiated to the semiconductor device is continuously supplied thereto, by the use of an infrared ray emitting diode during operation, thereby maintaining the power saving effects with stability and continuity.

摘要翻译： 本发明涉及一种省电装置，其中光能量照射到半导体器件上，其中当电压被提供给传输线时发出的光能量，使得传输线上的电子的波长沿着 负载驱动电流流动细长，电子的自旋运动和振动状态稳定，从而减少电子的碰撞，以减少能量的损失，并且其中照射到半导体器件的光能被连续供给到 ，通过在运转中使用红外线发射二极管，由此保持了稳定性和连续性的省电效果。

公开(公告)号：US20060141803A1

公开(公告)日：2006-06-29

申请号：US11319617

申请日：2005-12-29

申请人： Dae Kwon

发明人： Dae Kwon

IPC分类号： H01L21/302

CPC分类号： H01L21/0206 ,  Y10S438/906

摘要： A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

摘要翻译： 提供了清洗基板上的氮化硅层的方法，以有效地从氮化硅层去除负极杂质如聚合物和颗粒。 在该方法中，氮化硅层的ζ电位从正极变为负，然后用选自碱溶液和NC-2溶液的第一溶液清洗氮化硅层。 因此，由于排斥力，带负电荷的杂质可以容易地去除。 在ζ电位变化之前和/或之后，可以用旋转洗涤器处理底物或快速倾倒冲洗。 为了改变ζ电位，将基板浸入第二溶液中，例如SC-1溶液，NC-2溶液和碱溶液。