公开(公告)号：US20200035717A1

公开(公告)日：2020-01-30

申请号：US16508603

申请日：2019-07-11

Applicant: Sharp Kabushiki Kaisha

Inventor： Kengo HARA ,  Tohru DAITOH ,  Hajime IMAI ,  Tetsuo KIKUCHI ,  Masahiko SUZUKI ,  Setsuji NISHIMIYA ,  Teruyuki UEDA ,  Masamitsu YAMANAKA

IPC: H01L27/12 ,  H01L29/786

Abstract: A thin film transistor substrate includes a source line, a gate electrode, a channel region, a source region, a drain region, and a pixel electrode. The gate electrode is a portion of a first metal film disposed upper than a first insulating film that is disposed upper than a semiconductor film. The source line is a portion of a second metal film disposed upper than a second insulating film that is disposed upper than the first metal film. The channel region is a portion of a section of the semiconductor film and disposed to overlap the gate electrode. The source region is prepared by reducing a resistance of a section of the semiconductor film. The drain region is prepared by reducing a resistance of a section of the semiconductor film. The pixel electrode is prepared by reducing a resistance of a section of the semiconductor film.

公开(公告)号：US20220157855A1

公开(公告)日：2022-05-19

申请号：US17665750

申请日：2022-02-07

Applicant: Sharp Kabushiki Kaisha

Inventor： Hajime IMAI ,  Tohru DAITOH ,  Tetsuo KIKUCHI ,  Masamitsu YAMANAKA ,  Yoshihito HARA ,  Tatsuya KAWASAKI ,  Masahiko SUZUKI ,  Setsuji NISHIMIYA

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L21/465 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343

Abstract: The oxide semiconductor layer is electrically connected to a source electrode or the source bus line within the source opening formed in the lower insulating layer, each wiring line connection section includes a lower conductive portion formed using the first conductive film, the lower insulating layer extending over the lower conductive portion, an oxide connection layer formed using an oxide film the same as the oxide semiconductor layer and electrically connected to the lower conductive portion within the lower opening formed in the lower insulating layer, an insulating layer covering the oxide connection layer, and an upper conductive portion electrically connected to the oxide connection layer within the upper opening formed in the insulating layer, wherein the oxide connection layer includes a region lower in a specific resistance than the channel region of the oxide semiconductor layer.

公开(公告)号：US20220077318A1

公开(公告)日：2022-03-10

申请号：US17524766

申请日：2021-11-12

Applicant: Sharp Kabushiki Kaisha

Inventor： Tetsuo KIKUCHI ,  Masahiko SUZUKI ,  Setsuji NISHIMIYA ,  Teruyuki UEDA ,  Masamitsu YAMANAKA ,  Tohru DAITOH ,  Hajime IMAI ,  Kengo HARA

IPC: H01L29/786 ,  H01L29/417 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A semiconductor device includes a thin film transistor, wherein: a semiconductor layer of the thin film transistor has a layered structure including a lower oxide semiconductor layer including In, Ga, Zn and Sn and an upper oxide semiconductor layer arranged on the lower oxide semiconductor layer and including In, Ga and Zn; a thickness of the lower oxide semiconductor layer is 20 nm or less; an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer is 5% or more; the upper oxide semiconductor layer includes no Sn, or an atomic ratio of Sn with respect to all metal elements of the upper oxide semiconductor layer is smaller than an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer; and a first angle θ1 between a side surface and a lower surface of the lower oxide semiconductor layer is smaller than a second angle θ2 between a side surface and a lower surface of the upper oxide semiconductor layer.

公开(公告)号：US20200312885A1

公开(公告)日：2020-10-01

申请号：US16830313

申请日：2020-03-26

Applicant: Sharp Kabushiki Kaisha

Inventor： Hajime IMAI ,  Tohru DAITOH ,  Tetsuo KIKUCHI ,  Masamitsu YAMANAKA ,  Yoshihito HARA ,  Tatsuya KAWASAKI ,  Masahiko SUZUKI ,  Setsuji NISHIMIYA

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L21/465 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343

Abstract: The oxide semiconductor layer is electrically connected to a source electrode or the source bus line within the source opening formed in the lower insulating layer, each wiring line connection section includes a lower conductive portion formed using the first conductive film, the lower insulating layer extending over the lower conductive portion, an oxide connection layer formed using an oxide film the same as the oxide semiconductor layer and electrically connected to the lower conductive portion within the lower opening formed in the lower insulating layer, an insulating layer covering the oxide connection layer, and an upper conductive portion electrically connected to the oxide connection layer within the upper opening formed in the insulating layer, wherein the oxide connection layer includes a region lower in a specific resistance than the channel region of the oxide semiconductor layer.