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14 条记录 (耗时 0.015 秒)

    METHOD FOR EXPANDING MESENCHYMAL STEM CELLS IN LOW-DENSITY AND HYPOXIC CULTURE
    11.
    发明申请
    METHOD FOR EXPANDING MESENCHYMAL STEM CELLS IN LOW-DENSITY AND HYPOXIC CULTURE 有权
    在低密度和高血压文化中扩展间充质干细胞的方法

    公开(公告)号：US20110129918A1

    公开(公告)日：2011-06-02

    申请号：US12627614

    申请日：2009-11-30

    申请人： Shih-Chieh Hung

    发明人： Shih-Chieh Hung

    IPC分类号： C12N5/071 ,  C12N5/00

    CPC分类号： C12N5/0663 ,  C12N2500/02

    摘要： The present invention relates to a novel method for expanding mesenchymal stem cells (MSCs) in low-density and hypoxic condition as compared to normal air conditions traditionally used in cell culture. The present method provides rapid and efficient expansion of human MSCs without losing cellular proliferation and stem cell properties, including increase in proliferation, decrease in senescence, and increase in differentiation potential both in vitro and in vivo. The expanded MSCs by the present method may maintain normal karyotyping, and will not form tumor when transplanted into mamma.

    摘要翻译： 本发明涉及与传统上用于细胞培养的正常空气条件相比，在低密度和低氧条件下扩展间充质干细胞（MSC）的新方法。 本发明方法提供人体MSC的快速和有效的扩增，而不会丧失细胞增殖和干细胞特性，包括体外和体内增殖，衰老减少和分化潜能的增加。 通过本方法扩增的MSC可以保持正常的核型分析，并且在移植到母体中时不会形成肿瘤。

    INTEGRATED STRUCTURE OF IGBT AND DIODE AND METHOD OF FORMING THE SAME
    12.
    发明申请
    INTEGRATED STRUCTURE OF IGBT AND DIODE AND METHOD OF FORMING THE SAME 有权
    IGBT和二极管的集成结构及其形成方法

    公开(公告)号：US20100301386A1

    公开(公告)日：2010-12-02

    申请号：US12563172

    申请日：2009-09-21

    申请人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jen-Hao Yeh ,  Li-Cheng Lin ,  Shih-Chieh Hung

    发明人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jen-Hao Yeh ,  Li-Cheng Lin ,  Shih-Chieh Hung

    IPC分类号： H01L27/06 ,  H01L21/77

    CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/66333

    摘要： An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.

    摘要翻译： IGBT和二极管的集成结构包括多个掺杂的阴极区域，并且提供其形成方法。 掺杂阴极区域堆叠在半导体衬底中，彼此重叠并接触。 与其他掺杂阴极区域相比，掺杂阴极区域越高，掺杂阴极区域的注入面积越大。 掺杂阴极区域和半导体衬底具有不同的导电类型，并且被施加作为二极管的阴极和IGBT的集电极。 堆叠的掺杂阴极区域可以增加阴极的薄度，并且防止晶片过度变薄和破裂。

    METHOD OF FORMING A POWER DEVICE
    13.
    发明申请
    METHOD OF FORMING A POWER DEVICE 有权
    形成功率器件的方法

    公开(公告)号：US20100055857A1

    公开(公告)日：2010-03-04

    申请号：US12334492

    申请日：2008-12-14

    申请人： Wei-Chieh Lin ,  Hsin-Yu Hsu ,  Hsin-Yen Chiu ,  Shih-Chieh Hung ,  Ho-Tai Chen ,  Jen-Hao Yeh ,  Li-Cheng Lin

    发明人： Wei-Chieh Lin ,  Hsin-Yu Hsu ,  Hsin-Yen Chiu ,  Shih-Chieh Hung ,  Ho-Tai Chen ,  Jen-Hao Yeh ,  Li-Cheng Lin

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66734

    摘要： A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.

    摘要翻译： 一种形成功率器件的方法包括提供衬底，至少具有沟槽并设置在衬底上的半导体层，覆盖半导体层的栅极绝缘层和设置在沟槽中的导电材料，执行离子注入工艺 从体层进行倾斜的离子注入工艺，从重掺杂区域进行倾斜的离子注入工艺，整体形成第一介电层，进行化学机械抛光工艺，直到布置在重掺杂区域之下的体层露出，形成源区 并且形成直接覆盖设置在沟槽的相对侧上的源极区域的源极迹线。