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公开(公告)号：US10294559B2
公开(公告)日：2019-05-21
申请号：US13420996
申请日：2012-03-15
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
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公开(公告)号：US08182661B2
公开(公告)日：2012-05-22
申请号：US11190389
申请日：2005-07-27
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译： 特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型等离子体溅射反应器的溅射靶组件。 目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。 孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。 四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。
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公开(公告)号：US20050274459A1
公开(公告)日：2005-12-15
申请号：US10867344
申请日：2004-06-14
申请人： Yoshiaki Tanase , William Sterling , Paul Haworth
发明人： Yoshiaki Tanase , William Sterling , Paul Haworth
CPC分类号： F16K1/2261 , F16K1/24 , F16K51/02 , H01L21/67126 , Y10S277/91
摘要： Embodiments of the invention generally provide a slit valve door seal. In one embodiment, a slit valve door seal includes a ring-shaped base having a center axis and at least one finger extending from the base. The finger is oriented substantially parallel to the center axis, wherein the base and the finger define a single, one-piece seal member. The seal is particularly suitable for using in sealing substrate access passages formed in load lock chambers.
摘要翻译： 本发明的实施例通常提供狭缝阀门密封件。 在一个实施例中，狭缝阀门密封件包括具有中心轴线的环形基座和从基座延伸的至少一根手指。 手指基本上平行于中心轴线定向，其中基部和手指限定单个单件密封构件。 该密封特别适合于在装载锁定室中形成的密封基板通路中使用。
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公开(公告)号：US20120175250A1
公开(公告)日：2012-07-12
申请号：US13420996
申请日：2012-03-15
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译： 特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。 目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。 孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。 四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。
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公开(公告)号：US07652223B2
公开(公告)日：2010-01-26
申请号：US11245590
申请日：2005-10-07
申请人： Yoshiaki Tanase , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Akihiro Hosokawa
CPC分类号： B23K26/24 , B23K15/0093 , B23K15/06 , B23K20/122 , B23K20/129 , C23C14/3414
摘要： Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam welding chamber comprises providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles, that are yet to be placed, on a surface of support, placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material, pumping out the gas in the electron beam welding chamber, preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition, and welding the at least two sputtering target tiles placed side by side into a large sputtering target.
摘要翻译： 本发明的实施例提供了一种焊接溅射靶砖以形成大型溅射靶的方法。 还提供了具有焊接溅射靶瓦的溅射靶组件的实施例。 在一个实施例中，用于在电子束焊接室中焊接溅射靶瓦的方法包括在至少两个尚未被放置的溅射靶瓦之间的预定的至少一个界面线上提供溅射靶材料的条带或粉末 在支撑体的表面上，将至少两个溅射靶瓦并排放置在所述至少两个溅射靶瓷砖的边缘邻接并且在溅射靶材料的条或粉末的顶部上形成至少一个界面线，泵出 电子束焊接室中的气体，将至少两个溅射靶砖和溅射靶材料的条或粉末预热至小于至少两个靶砖开始熔化的温度的预热温度，经历 物理状态的变化或者经历显着的分解，并将至少两个并排放置的溅射靶砖焊接到大的溅射靶中。
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16.发明授权
公开(公告)号：US5685914A
公开(公告)日：1997-11-11
申请号：US223335
申请日：1994-04-05
申请人： Graham W. Hills , Yuh-Jia Su , Yoshiaki Tanase , Robert E. Ryan
发明人： Graham W. Hills , Yuh-Jia Su , Yoshiaki Tanase , Robert E. Ryan
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32642 , H01J2237/022 , Y10S156/915 , Y10S156/916
摘要： In one aspect, the invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pedestal focus ring surrounding the periphery of the wafer for reducing the process etch rate near the wafer periphery, and plural openings through the pedestal focus ring which permit passage therethrough of particulate contamination, thereby reducing accumulation of particulate contamination near the wafer periphery. In another aspect, in order to reduce corrosive wear of the chamber walls, a removable gas distribution focus ring shields the side walls of the plasma reactor from reactive gases associated with processing of the semiconductor wafer.
摘要翻译： 在一个方面，本发明体现在用于处理半导体晶片的等离子体反应器中，反应器具有围绕晶片周边的基座聚焦环，用于降低晶片周边附近的工艺蚀刻速率，以及穿过基座聚焦环的多个开口 其允许颗粒污染通过，从而减少晶片周边附近的颗粒污染物的积聚。 在另一方面，为了减少室壁的腐蚀磨损，可移除的气体分配聚焦环屏蔽等离子体反应器的侧壁与与半导体晶片的处理有关的反应性气体。
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