公开(公告)号：US20100103562A1

公开(公告)日：2010-04-29

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US08049997B2

公开(公告)日：2011-11-01

申请号：US12285069

申请日：2008-09-29

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

摘要翻译： 位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。 位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。 两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。 第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

公开(公告)号：US07881021B2

公开(公告)日：2011-02-01

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.

摘要翻译： 一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到 所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化 彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

公开(公告)号：US20090290264A1

公开(公告)日：2009-11-26

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

公开(公告)号：US08369192B1

公开(公告)日：2013-02-05

申请号：US13298360

申请日：2011-11-17

申请人： Eiji Komura ,  Koji Shimazawa ,  Tsutomu Chou ,  Shinji Hara ,  Daisuke Miyauchi

发明人： Eiji Komura ,  Koji Shimazawa ,  Tsutomu Chou ,  Shinji Hara ,  Daisuke Miyauchi

IPC分类号： G11B11/00

CPC分类号： G11B5/3116 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head enables even steeper magnetization reversal between adjacent magnetic domains of a magnetic recording medium and satisfies the demand for high SN ratio and high recording density. The thermally-assisted magnetic recording head includes a pole that generates a writing magnetic field from an end surface that forms a part of an air bearing surface that opposes a magnetic recording medium, a waveguide through which light for exciting surface plasmon propagates, and a plasmon generator that couples to the light in a surface plasmon mode. The plasmon generator has a plane part and a projection part, the pole has a projection part opposing surface that opposes the projection part, and the distance between the projection part opposing surface and the projection part is 10-40 nm.

摘要翻译： 热辅助磁记录头使磁记录介质的相邻磁畴之间的磁化反转能够更高，并满足高SN比和高记录密度的要求。 热辅助磁记录头包括从形成与磁记录介质相对的空气轴承表面的一部分的端面产生书写磁场的磁极，用于激发表面等离子体激元的光传播的波导和等离子体激元 发生器以表面等离子体模式耦合到光。 等离子体发生器具有平面部分和突出部分，所述极具有与突出部分相对的突出部分相对表面，并且突出部分相对表面和突出部分之间的距离为10-40nm。

公开(公告)号：US08094420B2

公开(公告)日：2012-01-10

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.

摘要翻译： 本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。 磁阻单元包括夹在铁磁层之间的非磁性中间层。 平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。 非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

公开(公告)号：US08023230B2

公开(公告)日：2011-09-20

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US20090303640A1

公开(公告)日：2009-12-10

申请号：US12109651

申请日：2008-04-25

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.

摘要翻译： 磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向 并且第二磁性层的磁化方向根据外部磁场而变化。 本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。

公开(公告)号：US08385160B2

公开(公告)日：2013-02-26

申请号：US12837725

申请日：2010-07-16

申请人： Shinji Hara ,  Tsutomu Chou ,  Tetsuya Roppongi ,  Daisuke Miyauchi ,  Kosuke Tanaka

发明人： Shinji Hara ,  Tsutomu Chou ,  Tetsuya Roppongi ,  Daisuke Miyauchi ,  Kosuke Tanaka

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  B82Y25/00 ,  G01R33/093 ,  G02B2006/121 ,  G11B5/6088 ,  G11B2005/0021

摘要： A magnetic recording element that faces a recording medium and that executes a magnetic recording while the recording medium is heated, the element including a waveguide that is configured with a core and a cladding, the core, through which laser light propagates, including an enlarged part, which is enlarged at an air bearing surface facing the recording medium; and the cladding surrounding a periphery of the core.

摘要翻译： 一种磁记录元件，其面向记录介质并且在记录介质被加热的同时执行磁记录，所述元件包括配置有芯和包层的波导，激光通过该芯体传播，其包括放大部分 ，其在面向记录介质的空气轴承表面处被扩大; 并且包围围绕芯的周边的包层。

公开(公告)号：US08264920B1

公开(公告)日：2012-09-11

申请号：US13191913

申请日：2011-07-27

申请人： Tsutomu Chou ,  Eiji Komura ,  Shinji Hara ,  Daisuke Miyauchi ,  Kosuke Tanaka

发明人： Tsutomu Chou ,  Eiji Komura ,  Shinji Hara ,  Daisuke Miyauchi ,  Kosuke Tanaka

IPC分类号： G11B11/00 ,  G11B7/135

CPC分类号： G11B5/314 ,  B82Y20/00 ,  G02B6/1226 ,  G11B5/3116 ,  G11B5/6088 ,  G11B2005/0021

摘要： A near-field light generator includes a waveguide, a plasmon generator, and a metal layer. The waveguide includes a core having an evanescent light generating surface. The plasmon generator includes a base part, and a protruding part that protrudes from the base part toward the evanescent light generating surface. The protruding part has: a front end face located at an end in a direction parallel to the evanescent light generating surface; a band-shaped flat surface facing toward the evanescent light generating surface; and two side surfaces connected to the flat surface. In at least a portion of the protruding part, the distance between the two side surfaces increases with increasing distance from the evanescent light generating surface. The flat surface includes a first portion contiguous with the front end face, and a second portion that is located farther from the front end face than is the first portion. The metal layer has an end face facing the first portion. The evanescent light generating surface faces the second portion.

摘要翻译： 近场光发生器包括波导管，等离子体激元发生器和金属层。 波导包括具有ev逝光产生表面的芯。 等离子体发生器包括基部和从基部朝向渐逝光产生表面突出的突出部分。 所述突出部具有：前端面，其位于与所述ev逝光生成面平行的方向的端部; 面向渐逝光产生表面的带状平坦表面; 以及连接到平坦表面的两个侧表面。 在突出部分的至少一部分中，两个侧表面之间的距离随着与渐消光产生表面的距离的增加而增加。 平坦表面包括与前端面相邻的第一部分，以及比第一部分更远离前端面的第二部分。 金属层具有面向第一部分的端面。 渐逝光产生表面面向第二部分。