公开(公告)号：US09704517B2

公开(公告)日：2017-07-11

申请号：US14962950

申请日：2015-12-08

申请人： Seagate Technology LLC

发明人： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

IPC分类号： G11B5/39 ,  G11B5/11 ,  G01R33/09 ,  H01L43/08 ,  G01R33/00 ,  G01R33/025 ,  H01L43/10 ,  H01F10/32

CPC分类号： G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

摘要： A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

公开(公告)号：US09230575B2

公开(公告)日：2016-01-05

申请号：US14105922

申请日：2013-12-13

申请人： Seagate Technology LLC

发明人： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

IPC分类号： G11B5/11 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  G01R33/00 ,  G01R33/025

CPC分类号： G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

摘要： Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

摘要翻译： 本文公开的实施例提供了一种磁阻（MR）传感器，其包括磁耦合到侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。

公开(公告)号：US08879213B2

公开(公告)日：2014-11-04

申请号：US13939799

申请日：2013-07-11

申请人： Kabushiki Kaisha Toshiba

发明人： Yousuke Isowaki ,  Hitoshi Iwasaki ,  Masayuki Takagishi

IPC分类号： G11B5/39 ,  G11B5/31 ,  G11B5/11

CPC分类号： G11B5/11 ,  G11B5/112 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/398 ,  Y10T428/1121

摘要： According to one embodiment, a magneto-resistance effect element includes: a first shield; a second shield; a first side shield layer; a second side shield layer; a stacked body; a first shield guide layer; and a second shield guide layer. The first shield guide layer includes a fifth magnetic layer provided between the first side shield layer and the stacked body. The second shield guide layer includes a sixth magnetic layer provided between the second side shield layer and the stacked body. A distance between the first side shield layer and the first shield guide layer is shorter than a distance between the stacked body and the first shield guide layer. A distance between the second side shield layer and the second shield guide layer is shorter than a distance between the stacked body and the second shield guide layer.

摘要翻译： 根据一个实施例，磁阻效应元件包括：第一屏蔽; 第二个盾牌 第一侧屏蔽层; 第二侧屏蔽层; 堆叠的身体 第一屏蔽引导层; 和第二屏蔽引导层。 第一屏蔽引导层包括设置在第一侧屏蔽层和层叠体之间的第五磁性层。 第二屏蔽引导层包括设置在第二侧屏蔽层和层叠体之间的第六磁性层。 第一侧屏蔽层和第一屏蔽引导层之间的距离比层叠体与第一屏蔽引导层之间的距离短。 第二侧屏蔽层和第二屏蔽引导层之间的距离比层叠体与第二屏蔽引导层之间的距离短。

公开(公告)号：US07881021B2

公开(公告)日：2011-02-01

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.

摘要翻译： 一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到 所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化 彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

公开(公告)号：US07092218B2

公开(公告)日：2006-08-15

申请号：US10464708

申请日：2003-06-17

申请人： Naoya Hasegawa ,  Eiji Umetsu

发明人： Naoya Hasegawa ,  Eiji Umetsu

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49048

摘要： The present invention provides a magnetic head including a magnetic flux guide layer for effectively inducing an external magnetic field in a free magnetic layer. A magnetic domain control layer is formed in a space below the magnetic flux guide layer and in front of a multilayer film near a surface facing a recording medium. Therefore, the shape of the magnetic flux guide layer can be made substantially flat to improve flux transmission efficiency. Also, the magnetization of the magnetic flux guide layer is controlled by laminating the magnetic flux guide layer on the magnetic domain control layer. Therefore, the magnetic domain control layer can be formed in a substantially flat thin film to stabilize a bias magnetic field to be supplied to the magnetic flux guide layer. Furthermore, the gap length of the magnetic head can be kept short.

摘要翻译： 本发明提供一种磁头，其包括用于有效地感应自由磁性层中的外部磁场的磁通引导层。 磁畴控制层形成在磁通导向层下面的空间中，并且在面向记录介质的表面附近的多层膜的前方形成。 因此，可以使磁通导向层的形状基本平坦化，以提高磁通传输效率。 此外，通过在磁畴控制层上层叠磁通引导层来控制磁通引导层的磁化。 因此，磁畴控制层可以形成在基本平坦的薄膜中，以稳定供给到磁通导向层的偏置磁场。 此外，磁头的间隙长度可以保持较短。

公开(公告)号：US07068477B2

公开(公告)日：2006-06-27

申请号：US10299124

申请日：2002-11-19

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L43/10

摘要： A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to establish a soft magnetic property in the nickel iron alloy. The body-centered cubic lattice contributes to reduction in the electric resistance of the magnetoresistive film as well as to improvement of the magnetoresistive ratio of the magnetoresistive film. Even if the magnetoresistive film is further reduced in size, the magnetoresistive film can sufficiently be prevented from suffering from an increase in the temperature. Even if a sensing current of a larger current value is supplied to the magnetoresistive film, the magnetoresistive film is reliably prevented from deterioration in the characteristics as well as destruction.

摘要翻译： 软磁性层由镍铁合金制成，含有面心立方晶格晶体和体心立方晶格晶体。 面心立方晶格用于在镍铁合金中建立软磁性能。 体心立方晶格有助于降低磁阻膜的电阻以及改善磁阻膜的磁阻比。 即使磁阻膜的尺寸进一步减小，也可以充分防止磁阻膜的温度升高。 即使向磁阻膜提供较大电流值的感测电流，可以可靠地防止磁阻膜的特性劣化以及破坏。

公开(公告)号：US07061726B2

公开(公告)日：2006-06-13

申请号：US10667232

申请日：2003-09-18

申请人： Shigekazu Ohtomo ,  Hiroshi Fukui ,  Sunao Yonekawa ,  Yoji Maruyama ,  Tadayuki Iwakura

发明人： Shigekazu Ohtomo ,  Hiroshi Fukui ,  Sunao Yonekawa ,  Yoji Maruyama ,  Tadayuki Iwakura

IPC分类号： G11B5/127

CPC分类号： G11B5/3916

摘要： A magnetic material having a low coefficient of thermal expansion of 11.5×10−6/K or less is used for forming at least one of a lower shield or an upper shield. A laminated film comprising a layer of the magnetic material having a low coefficient of thermal expansion of 11.5×10−6/K or less, and an 80 wt % NiFe alloy layer, is used for forming at least one of the lower shield and the upper shield. Thus, the thin film magnetic head having reduced after-record noise and reduced thermal protrusion can be obtained.

摘要翻译： 使用具有11.5×10 -6 / K或更小的热膨胀系数低的磁性材料来形成下屏蔽或上屏蔽中的至少一个。 使用包含具有11.5×10 -6 / K以下的低热膨胀系数的磁性材料层和80重量％的NiFe合金层的层叠膜，以形成至少一个 的下屏蔽和上屏蔽。 因此，可以获得具有降低的记录后噪声和降低的热突起的薄膜磁头。

公开(公告)号：US06977799B2

公开(公告)日：2005-12-20

申请号：US10896774

申请日：2004-07-22

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B5/012 ,  G11B5/11 ,  G11B5/39 ,  G11B5/40

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

公开(公告)号：US20050135020A1

公开(公告)日：2005-06-23

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2c,X3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， X 1，X 3是选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种 ，Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W中的至少一种， Re，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < = a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06842317B2

公开(公告)日：2005-01-11

申请号：US10692362

申请日：2003-10-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01F10/14

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes a multilayer film configuration including: a tunnel insulation layer; and a pair of magnetic layers that are laminated with the tunnel insulation layer interposed therebetween. A resistance value of the magnetoresistive element varies with a relative angle between magnetic orientations of both of the magnetic layers, and at least one of the magnetic layers includes a magnetic film having a thermal expansion coefficient not greater than a value obtained by adding 2×10−6/K to a thermal expansion coefficient of the tunnel insulation layer. The thus configured magnetoresistive element can exert excellent thermal stability. The use of such a magnetoresistive element can realize a magnetic head, a magnetic memory element and a magnetic recording apparatus with excellent thermal stability.

摘要翻译： 磁阻元件包括多层膜构造，包括：隧道绝缘层; 以及与隧道绝缘层层叠的一对磁性层。 磁阻元件的电阻值随着两个磁性层的磁取向之间的相对角度而变化，并且至少一个磁性层包括热膨胀系数不大于通过加入2×10 -3 - 6> / K对隧道绝缘层的热膨胀系数。 这样配置的磁阻元件可以发挥优异的热稳定性。 使用这种磁阻元件可以实现具有优异的热稳定性的磁头，磁存储元件和磁记录装置。