摘要:
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.
摘要:
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.
摘要:
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.
摘要:
An object of the invention is to provide a polishing pad which has a polishing layer with a phase-separated structure and can provide high polishing rate and high planarization property and with which scratching can be suppressed. The polishing pad comprises the polishing layer. The polishing layer comprises a product of curing reaction of a polyurethane-forming raw material composition containing: (A) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (a) containing an isocyanate component and a polyester-based polyol; (B) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (b) containing an isocyanate component and a polyether-based polyol; and a chain extender, wherein the product of curing reaction has a phase-separated structure.
摘要:
A display device includes a display panel unit and a backlight unit which radiates light toward the display panel. The display panel unit includes a display panel on an upper surface of a box-shaped panel housing which has first projecting portions on side walls of the housing. The backlight unit incorporates a light source in a bottom portion of a box-shaped light source housing which has second projecting portions on side walls of the light source housing. By bringing the first projecting portions and second projecting portions into contact with each other, a distance between the light source of the backlight unit and the display panel can be held. Further, by forming third projecting portions which project further than the first projecting portions on the panel housing, handling of the display panel unit is facilitated.
摘要:
An optical characteristic measuring apparatus of the invention is configured in such a manner that a specular reflection light component in reflection light from an object to be measured is received, and shake of the apparatus is detected based on the amount of the received light. The optical characteristic measuring apparatus having the above arrangement enables to precisely measure an optical characteristic of the object to be measured, without the need of providing a mechanical switch or a like device, and without depending on the shape of the object to be measured.
摘要:
An electrical connector includes a plurality of terminals (1) having contact sections (4) extending in the plugging direction and arranged in the arranging sections at a predetermined intervals for contact with the contact sections (32A) of a mating connector (30). The arranging section is made in the inside surface of a single wall of the housing.
摘要:
A color luminance meter 1 is provided with a polychrometer 4 as a spectral optical system including a light receiving sensor array 43, a signal processing circuit 5 and an operation control unit 6. The operation control unit 6 carries out calculations to obtain characteristics of a measurement light based on a specified spectral responsitivity, using light reception signals and specified weighting coefficients. The spectral responsitivities of light receiving sensors constructing the light receiving sensor array 43 are selected such that B≧5 nm and A/B lies within a range of 1.5 to 4.0 when A, B denote the half power band width of the spectral responsitivities and a center wavelength interval of the spectral responsitivities. Accordingly, there can be provided a light measuring apparatus capable of maximally suppressing errors to highly precisely measure color luminance values and the like even in a measurement of a light lying in a narrow band such as a monochromatic light.
摘要:
A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.
摘要:
A hemocathartic column and apparatus, in which a column containing an adsorber capable of adsorbing and removing impurity components in blood, and in which the blood of an organism is extracorporeally circulated through the column, to be purified, and further in which if the pressure of blood at 120 minutes after start of blood circulation is P120 and the pressure of blood at 5 minutes after start of blood circulation is P5, then a relation of (P120/P5)≦1.3 is satisfied.