摘要:
A connecting rod is formed using a method that includes providing a connecting rod blank. The connecting rod blank has a rod section disposed between a big end and a small end. The big end has a first hole generally sized to receive a crankpin of a crankshaft and at least one second hole generally sized to receive a bolt, wherein the axes of the first and second holes are generally normal to each other. The big end of the connecting rod has a dividing plane that extends through both the first and second holes. The connecting rod blank is processed by hardening at least the big end to a sufficient depth such that a first region of the big end lying between the first and second holes at the dividing plane is hardened, while leaving a substantial second region of the big end at the dividing plane generally unhardened. The connecting rod blank is further processed by splitting the big end along the dividing plane to produce a rod part fracture surface and a cap part fracture surface.
摘要:
A breaking and splitting structure of a connecting rod has a large end having a crank pin bore including a surface-hardened surface. The large end is broken and split into a rod section and a cap section, and the rod and cap sections are coupled with fastening bolts, with their broken and split surfaces engaged and aligned with each other. A breakage-starting portion extends in the axial direction of the crank pin bore and is formed in an inside circumferential surface of the crank pin bore of the large end. An axial length of the breakage-starting portion is smaller than the axial length of the inside circumferential surface.
摘要:
There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer.
摘要:
In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer.
摘要:
A biometrics authentication system detect body characteristics, verify the characteristics against registered biometrics data to perform individual authentication. In 1:n authentication, a plurality of different type biometrics database sets of a user are registered in a database, and at the time of verification of one type biometrics data set with one type registered biometrics data set, the control unit judges whether similar biometrics data sets of other person are registered, and if other person's similar biometrics data sets are registered, performs verification of each of the another type biometrics data sets of the plurality of similar biometrics data sets with the detected another type biometrics data set, and identifies the individual in question.
摘要:
A shutter curtain lifting prevention structure comprises a shutter curtain formed by connecting a plurality of slats via an interlock portion in the vertical direction, guide rails standing on both sides of an opening of the construction, and a cutout recess being integrally formed at the guide groove of each guide rail. The cutout recess is formed by horizontally cutting out the interior side plane portion of the front face located above and in the vicinity of the floor surface, such that when a bottom plate of the shutter curtain kept in a shut state is lifted, a connection portion of the bottom plate and the slat, which is opposed to the cutout recess is made engaged by the engaging portion defined by the cutout recess, thus preventing lifting of the shutter curtain.
摘要:
A split connecting rod includes a fracture start groove that extends in an axial direction X and is located at the approximate center of each of opposing positions on an inner surface of a crank pin opening. A bearing securing groove is provided on either or both of the opposing positions on the inner surface of the crank pin opening. Notches are provided, respectively, at both ends of each of the opposing positions in the axial direction X on the inner surface of the crank pin opening. The fracture start groove has a stress concentration factor that is greater than those of the notches and the bearing securing groove. Preferably, steel for use as the material of a connecting rod has a carbon content of about 0.05% to about 0.45% by weight, more preferably about 0.10% to about 0.35% by weight.
摘要:
A drug and a composition for inhibiting biofilm formation are provided. A biofilm formation inhibitor composition containing the following component (A): (A) at least one or more selected from compounds represented by Formula (1) to Formula (4): wherein R1 to R5 each represent an alkyl group or the like; EO represents an ethyleneoxy group; p represents an integer from 0 to 5; and m+n represents a number from 0 to 30, or a salt thereof; and (B) a surfactant.
摘要翻译:提供了用于抑制生物膜形成的药物和组合物。 含有下述成分(A)的生物膜形成抑制剂组合物:(A)选自式(1)〜式(4)表示的化合物中的至少一种以上:其中,R1〜R5各自表示烷基等; EO表示乙烯氧基; p表示0〜5的整数, m + n表示0〜30的数,或其盐; 和(B)表面活性剂。
摘要:
A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.
摘要:
A conductor connection tool includes a terminal platform base, a conduction fitting accommodated in a fitting recessed part of the terminal platform base. The conduction fitting is formed in a substantially U shape and includes a bottom plate portion, a vertical portion bent vertically upward from one end of the bottom plate portion, and an attachment portion extending from an upper end of the vertical portion in parallel to the bottom plate portion, and having a terminal portion extending in the opposite direction to the attachment portion. A plate spring bent in a substantially V shape with one side serving as an attachment piece to be fixed to the attachment portion of the conduction fitting with the other side serving as a locking piece whose front end is to be brought into pressure contact with the bottom plate portion of the conduction fitting.