High current ribbon beam ion implanter
    11.
    发明授权
    High current ribbon beam ion implanter 失效
    高电流带状束离子注入机

    公开(公告)号:US5834786A

    公开(公告)日:1998-11-10

    申请号:US761065

    申请日:1996-12-05

    摘要: A compact high current broad beam ion implanter employs a high current density source, a bending magnet to steer the beam and straighten trajectories, and a multipole unit extending across the beam path to tailor a precise one-dimensional beam current distribution which yields a uniform implantation dose with a possibly non-uniform workpiece transport assembly. In one embodiment, the multipole unit is a separate magnet assembly positioned adjacent to a output face of the bending magnet, and includes one or more ranks of closely-spaced pole elements, controlled so the drive current or position of each pole element is varied to affect a narrow band of the beam passing over that element. In another embodiment, the bending magnet is an analyzing magnet which directs a desired species through a resolving slit, and a second magnet deflects the resultant beam while rendering it parallel and further correcting it along its width dimension. As with the first embodiment, multipole elements are adjusted to fit the derived profile. Both magnets preferably have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. The multipole elements are adjacent to or incorporated in the dipoles, preferably at a downstream side, and operate to shift beam power along the width dimension, locally adjusting the beam current density to achieve the desired profile. A separate multipole array, such as an electromagnet with blade poles oriented at progressive angles may adjust the entrance beam.

    摘要翻译: 紧凑型大电流宽光束离子注入机采用高电流密度源,弯曲磁铁来控制光束和拉直轨迹,以及跨过光束路径延伸的多极单元,以定制精确的一维光束电流分布,产生均匀的注入 剂量与可能不均匀的工件传输组件。 在一个实施例中,多极单元是与弯曲磁体的输出面相邻定位的单独的磁体组件,并且包括一个或多个紧密间隔的极元件等级,被控制使得每个磁极元件的驱动电流或位置变化为 影响通过该元件的光束的窄带。 在另一个实施例中,弯曲磁体是分析磁体,其通过分辨狭缝引导期望的物质,并且第二磁体使所得到的光束平行并使其沿其宽度尺寸进一步校正。 与第一实施例一样,调节多极元件以适合导出的轮廓。 两个磁体优选地具有相对较大的极间隙,宽的输入和输出面,并且通过小的曲率半径偏转以产生没有不稳定性的光束。 多极元件与偶极子相邻或并入其中,优选地在下游侧,并且用于沿着宽度尺寸移动光束功率,局部地调整光束电流密度以实现期望的分布。 单独的多极阵列,例如具有以渐进角度定向的叶片极的电磁体可以调节入射光束。

    High speed movement of workpieces in vacuum processing
    12.
    发明授权
    High speed movement of workpieces in vacuum processing 失效
    真空加工中工件的高速运动

    公开(公告)号:US5486080A

    公开(公告)日:1996-01-23

    申请号:US269159

    申请日:1994-06-30

    申请人: Manny Sieradzki

    发明人: Manny Sieradzki

    摘要: A high speed wafer processing apparatus employs two wafer transport robots to move wafers from two load locks past a processing station with gentle vacuum cycling and without pumpdown delays. Both robots alternately transport each wafer from the cassette at a single one of the load locks along a path from the cassette to a transfer position through the process station and back to the cassette, while pumpdown or venting of the other (second) load lock is carried out. They then transport the wafers from the second load lock through the process station. A wafer is "parked" at a transfer or orienting station, rather than handed over from robot to robot, so that the robots are not both tied up with a single wafer, and two or more wafers can move simultaneously along the path. Even for a fast ten second process time, work flow proceeds without interruption, periodic delay or dead time, and three to five minutes are available for venting, loading a new cassette and pumpdown. The robots enjoy partial path overlap, and operate in bucket brigade fashion without stop.

    摘要翻译: 高速晶片处理装置使用两个晶片传送机器人来从两个加载锁移动晶片通过处理站,具有温和的真空循环并且没有抽空延迟。 两个机器人在一个装载锁上的一个装载锁上将每个晶片从盒中交替传送,沿着从盒的路径传递到通过处理站的转移位置并返回到盒,而另一个(第二)装载锁的抽吸或排气是 执行。 然后,他们将晶片从第二个加载锁传送到处理站。 晶片在转移或定位站“停放”,而不是从机器人移交到机器人,使得机器人不会被单个晶片捆绑,并且两个或更多个晶片可以沿着路径同时移动。 即使快速十秒的处理时间,工作流程不间断地进行,定期延迟或死区时间,三到五分钟可用于排放,装入新的盒式磁带和抽空。 机器人享受部分路径重叠,无需停车就可以进行斗旅。

    Ion Implanter Having Combined Hybrid and Double Mechanical Scan Architecture
    13.
    发明申请
    Ion Implanter Having Combined Hybrid and Double Mechanical Scan Architecture 有权
    具有混合和双机械扫描架构的离子机

    公开(公告)号:US20090321625A1

    公开(公告)日:2009-12-31

    申请号:US12554277

    申请日:2009-09-04

    IPC分类号: H01J49/26

    摘要: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

    摘要翻译: 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量,并且由离子源形成点离子束,并通过质量分析器进行质量分析。 基于所需的离子剂量,将离子以第一模式和第二模式中的一种注入到工件中,其中在第一模式中,离子束被位于质量分析器下游的束扫描系统扫描,并由 位于光束扫描系统下游的并联器。 在第一模式中,工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中,离子束通过光束扫描系统,并行扫描未扫描,工件通过点离子束二维扫描。

    Compact high current broad beam ion implanter
    14.
    发明授权
    Compact high current broad beam ion implanter 失效
    紧凑型大电流宽束离子注入机

    公开(公告)号:US5350926A

    公开(公告)日:1994-09-27

    申请号:US29766

    申请日:1993-03-11

    CPC分类号: H01J37/05 H01J37/3171

    摘要: A compact high current broad beam ion implanter capable of serial processing employs a high current density source, an analyzing magnet to direct a desired species through a resolving slit, and a second magnet to deflect the resultant beam while rendering it parallel and uniform along its width dimension. Both magnets have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. Multipole elements incorporated within at least one magnet allow higher order aberrations to be selectively varied to locally adjust beam current density and achieve the high degree of uniformity along the beam width dimension.

    摘要翻译: 能够进行串联处理的紧凑型高电流宽光束离子注入机采用高电流密度源,分析磁铁通过分辨狭缝引导所需物质,以及第二磁体使得所得到的光束偏转,同时使其沿其宽度平行和均匀 尺寸。 两个磁体具有相对较大的极间隙,宽的输入和输出面,并且通过小的曲率半径偏转以产生没有不稳定性的光束。 结合在至少一个磁体中的多极元件允许选择性地改变高阶像差,以局部地调整束电流密度并且沿着光束宽度尺寸实现高度均匀性。