公开(公告)号：US20240365551A1

公开(公告)日：2024-10-31

申请号：US18630142

申请日：2024-04-09

申请人： Applied Materials, Inc.

发明人： Chang Seok Kang ,  Steven C. H. Hung ,  Hsueh Chung Chen ,  Naomi Yoshida ,  Sung-Kwan Kang ,  Balasubramanian Pranatharthiharan

IPC分类号： H10B43/35 ,  H01L21/67 ,  H01L23/528 ,  H01L23/532 ,  H10B43/20

CPC分类号： H10B43/35 ,  H01L21/67161 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53257 ,  H10B43/20

摘要： Exemplary semiconductor structures may include a substrate. The structures may include a first layer of silicon-and-oxygen-containing material overlying the substrate. The structures may include a second layer of silicon-and-oxygen-containing material. The structures may include a first layer of metal-and-oxygen-containing material between the first layer of silicon-and-oxygen-containing material and the second layer of silicon-and-oxygen-containing material. The first layer of metal-and-oxygen-containing material may include a first metal. The structures may include a second layer of metal-and-oxygen-containing material disposed within the first layer of metal-and-oxygen-containing material. The second layer of metal-and-oxygen-containing material may include a second metal. The structures may include a gate disposed within the second layer of metal-and-oxygen-containing material.

公开(公告)号：US20240321636A1

公开(公告)日：2024-09-26

申请号：US18186656

申请日：2023-03-20

申请人： Applied Materials, Inc.

发明人： Tyler Sherwood ,  Raghav Sreenivasan

IPC分类号： H01L21/768 ,  H01L23/373 ,  H01L23/532

CPC分类号： H01L21/76883 ,  H01L21/7684 ,  H01L23/3736 ,  H01L23/53233 ,  H01L21/02068 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76843 ,  H01L23/53238

摘要： The present technology includes semiconductor processing methods and devices with improved expansion of the bulk material in substrate features. Methods include cleaning a substrate that is formed from silicon oxide and that defines one or more features and that includes a liner that extends across the silicon oxide and within one or more features and a copper-containing layer deposited on the liner and extending within the one or more features. Methods include depositing a second metal over the substrate, where the second metal has a coefficient of thermal expansion of greater than or about 17. Methods also include diffusing the second metal into the copper containing layer to form a copper alloy.

公开(公告)号：US20240312811A1

公开(公告)日：2024-09-19

申请号：US18677637

申请日：2024-05-29

申请人： Kateeva, Inc.

发明人： Conor F. Madigan ,  Eliyahu Vronsky ,  Alexander Sou-Kang Ko ,  Justin Mauck

IPC分类号： H01L21/67 ,  H01L21/673 ,  H10K71/00 ,  H10K71/13 ,  H10K71/40

CPC分类号： H01L21/67225 ,  H01L21/67393 ,  H10K71/00 ,  H10K71/135 ,  H10K71/40 ,  H10K71/811 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207

摘要： Apparatus and techniques are described herein for use in manufacturing electronic devices, such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

公开(公告)号：US20240249964A1

公开(公告)日：2024-07-25

申请号：US18417564

申请日：2024-01-19

申请人： Tokyo Electron Limited

发明人： Shinsuke TAKAKI ,  Seiji NAKASHIMA ,  Akihiro TERAMOTO ,  Ryo SHOBU

IPC分类号： H01L21/677 ,  H01L21/67 ,  H01L21/673

CPC分类号： H01L21/67736 ,  H01L21/67161 ,  H01L21/67225 ,  H01L21/67389 ,  H01L21/6773

摘要： A substrate processing system that performs substrate processing includes: a first processing system having one of a wet processing apparatus and a dry processing apparatus; a second processing system having the other one of the wet processing apparatus and the dry processing apparatus, wherein the first processing system includes a common stage, which is common to the first processing system and the second processing system and is configured to place thereon a container accommodating substrates before being subjected to the substrate processing, wherein the substrate processing system further includes: a first transfer system configured to transfer the substrates between the first processing system and the second processing system; and a second transfer system connected to at least the second processing system, and configured to transfer the substrates between the first processing system and the second processing system, or between another stage and the second processing system.

公开(公告)号：US20240222148A1

公开(公告)日：2024-07-04

申请号：US18395487

申请日：2023-12-23

申请人： SEMES CO., LTD.

发明人： Ickkyun KIM ,  Sang Yong EOM ,  Cheol PARK ,  Moon Hyung BAE ,  Tae Young KIM

IPC分类号： H01L21/67 ,  H01L21/677

CPC分类号： H01L21/67017 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67253 ,  H01L21/67766 ,  G03F7/162

摘要： Provided is an airflow control system and airflow control method capable of preventing the inflow of foreign, the airflow control system including at least one grating panel mounted on a floor of a clean room and including a plurality of through holes, a semiconductor manufacturing equipment spaced apart from the grating panel by a gap space by using supports or legs, and including a fan mounted toward the grating panel, and a negative pressure preventer for preventing a negative pressure locally formed in the gap space due to a pressure difference between an outer downward airflow flowing along sides of the semiconductor manufacturing equipment and expelled to an outside through the through holes of the grating panel, and an inner downward airflow flowing from the semiconductor manufacturing equipment to the grating panel by the fan and expelled to the outside through the through holes of the grating panel.

公开(公告)号：US12024772B2

公开(公告)日：2024-07-02

申请号：US17811978

申请日：2022-07-12

申请人： ASM IP HOLDING B.V.

发明人： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

CPC分类号： C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

摘要： In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US11929268B2

公开(公告)日：2024-03-12

申请号：US16966909

申请日：2019-01-22

申请人： Tokyo Electron Limited

发明人： Munehisa Kodama

IPC分类号： H01L21/67 ,  B08B3/10 ,  B08B13/00 ,  B24B37/10 ,  H01L21/304 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/67178 ,  B08B3/10 ,  B08B13/00 ,  B24B37/10 ,  H01L21/304 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67748 ,  H01L21/68707

摘要： A substrate processing system configured to process a substrate includes a carry-in/out unit configured to carry the substrate from/to an outside thereof; a processing unit configured to process a processing surface of the substrate; a cleaning unit provided between the carry-in/out unit and the processing unit when viewed from a top, and configured to clean the processing surface after being processed in the processing unit; a first transfer unit stacked on top of the cleaning unit, and configured to transfer the substrate; and a second transfer unit provided between the processing unit and the first transfer unit when viewed from the top, and configured to transfer the substrate. The first transfer unit transfers the substrate between the carry-in/out unit and the second transfer unit. The second transfer unit transfers the substrate between the first transfer unit and the processing unit and between the processing unit and the cleaning unit.

公开(公告)号：US11923188B2

公开(公告)日：2024-03-05

申请号：US17025388

申请日：2020-09-18

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Takeo Hanashima

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67

CPC分类号： H01L21/02123 ,  C23C16/455 ,  C23C16/4584 ,  H01L21/67161

摘要： There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

公开(公告)号：US11891692B2

公开(公告)日：2024-02-06

申请号：US16901566

申请日：2020-06-15

申请人： Murata Manufacturing Co., Ltd.

发明人： Yasuhiro Chikaishi ,  Shigeki Yamane

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  H01L21/673

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  H01L21/67155 ,  H01L21/67161 ,  H01L21/67326

摘要： A film-forming device which includes a chamber having a horizontal central axis, capable of maintaining a vacuum, and movable along the horizontal central axis, the chamber including an inner chamber and an outer chamber that houses the inner chamber; a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the inner chamber; and a heater that heats an inside of the chamber.

公开(公告)号：US20230317471A1

公开(公告)日：2023-10-05

申请号：US18195095

申请日：2023-05-09

申请人： Ichor Systems, Inc.

发明人： Philip Ryan Barros ,  Greg Patrick Mulligan ,  Chris Melcer

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/677

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67739

摘要： An improved fluid delivery system and method that directly controls the concentration of constituent components in a fluid mixture delivered, for example, to a process chamber. Pressure of the fluid mixture can also be directly controlled. A concentration sensor capable of measuring concentration of all of the constituent components in a fluid mixture is used to provide signals used to vary the flow rate of constituent gases under a closed loop feedback system. The signal output of one or more pressure sensors can also be used to provide a signal used to vary the flow rate of constituent gases under a closed loop feedback system. By directly controlling these two extremely important process variables, embodiments of the present invention provide a significant advantage in measurement accuracy over the prior art, enable real-time process control, reduce system level response time, and allow for a system with a significant footprint reduction.