公开(公告)号：US06215087B1

公开(公告)日：2001-04-10

申请号：US09101516

申请日：1998-07-10

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。