公开(公告)号：US20210225695A1

公开(公告)日：2021-07-22

申请号：US17207202

申请日：2021-03-19

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US20210202326A1

公开(公告)日：2021-07-01

申请号：US17250767

申请日：2019-09-03

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Nicolas Daval ,  Bich-Yen Nguyen ,  Guillaume Besnard

IPC: H01L21/8238 ,  H01L21/762 ,  H01L21/324

Abstract: A method for manufacturing a CFET device comprises forming a substrate of the double semi-conductor on insulator type, successively comprising, from the base to the surface thereof: a carrier substrate, a first electrically insulating layer, a first single-crystal semiconductor layer, a second electrically insulating layer and a second single-crystal semiconductor layer. Slices are formed into the substrate to the first electrically insulating layer so as to form at least one fin (F). A channel of a first transistor is formed in the first semiconductor layer and a channel of a second transistor is formed opposite the first transistor in the second semiconductor layer. Formation of the substrate of the double semi-conductor on insulator type, comprises: a first and a second step of transferring a layer and thermal processing at a temperature that is sufficiently high to smooth the first single-crystal semiconductor layer to a roughness lower than 0.1 nm RMS.

公开(公告)号：US10672646B2

公开(公告)日：2020-06-02

申请号：US16301260

申请日：2017-05-17

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L27/12 ,  H01L21/762

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate includes bonding a donor substrate to a receiving substrate, with a dielectric layer at the interface, and transferring a monocrystalline semiconductor layer from the donor substrate to the receiving substrate. A portion is cut from a stack formed from the transferred monocrystalline semiconductor layer from the dielectric layer and from the strained semiconductor material layer. The cutting results in the relaxation of the strain in the strained semiconductor material, and in the application of at least a part of the strain to the transferred monocrystalline semiconductor layer. The method also involves the formation, on the strained semiconductor material layer of the receiving substrate, of a dielectric bonding layer or of a bonding layer consisting of the same relaxed, or at least partially relaxed, monocrystalline material as the monocrystalline semiconductor layer of the donor substrate.

公开(公告)号：US20230386896A1

公开(公告)日：2023-11-30

申请号：US18449298

申请日：2023-08-14

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Guillaume Chabanne ,  Nicolas Daval

IPC: H01L21/762

CPC classification number: H01L21/76275 ,  H01L21/76254

Abstract: A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

公开(公告)号：US20220059603A1

公开(公告)日：2022-02-24

申请号：US17418148

申请日：2019-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC: H01L27/146 ,  H01L31/18

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US09768057B2

公开(公告)日：2017-09-19

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabelle Guerin

IPC: H01L21/66 ,  H01L21/762 ,  H01L21/02 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.