公开(公告)号：US20150315013A1

公开(公告)日：2015-11-05

申请号：US14328727

申请日：2014-07-11

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Cheng-Wei Tsai ,  Jhyy-Cheng Liou

IPC: B81B7/00 ,  H04R23/00

CPC classification number: H04R19/005 ,  B81B7/0006 ,  B81B7/0058 ,  B81B2201/0257 ,  H04R23/006 ,  H04R2201/003 ,  H04R2460/11

Abstract: A micro-electrical-mechanical system (MEMS) microphone includes a MEMS structure, having a substrate, a diaphragm, and a backplate, wherein the substrate has a cavity and the backplate is between the cavity and the diaphragm. The backplate has multiple venting holes, which are connected to the cavity and allows the cavity to extend to the diaphragm. Further, an adhesive layer is disposed on the substrate, surrounding the cavity. A cover plate is adhered on the adhesive layer, wherein the cover plate has an acoustic hole, dislocated from the cavity without direct connection.

Abstract translation: 微电气机械系统（MEMS）麦克风包括具有基板，隔膜和背板的MEMS结构，其中基板具有空腔，并且背板位于空腔和隔膜之间。 背板具有多个通气孔，其连接到空腔并允许空腔延伸到隔膜。 此外，粘合层设置在基板上，围绕空腔。 盖板粘附在粘合剂层上，其中盖板具有声孔，从空腔脱位而没有直接连接。

公开(公告)号：US20150118780A1

公开(公告)日：2015-04-30

申请号：US14066712

申请日：2013-10-30

Applicant: Solid State System Co., Ltd.

Inventor： Cheng-Wei Tsai ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: H04R31/00

CPC classification number: H04R31/00 ,  H01L2224/48137 ,  H01L2924/16151 ,  H01L2924/16152 ,  H04R19/005 ,  H04R2201/003

Abstract: A method to protect an acoustic port of a microelectromechanical system (MEMS) microphone is provided. The method includes: providing the MEMS microphone; and forming a protection film, on the acoustic port of the MEMS microphone. The protection film has a porous region over the acoustic port to receive an acoustic signal but resist at least an intruding material. The protection film can at least endure a processing temperature of solder flow.

Abstract translation: 提供了保护微机电系统（MEMS）麦克风的声学端口的方法。 该方法包括：提供MEMS麦克风; 并在MEMS麦克风的声学端口上形成保护膜。 保护膜在声学端口上方具有多孔区域以接收声信号，但是至少阻挡入侵材料。 保护膜至少可以承受焊料流动的处理温度。

公开(公告)号：US08934649B1

公开(公告)日：2015-01-13

申请号：US14013049

申请日：2013-08-29

Applicant: Solid State System Co., Ltd.

Inventor： Chien-Hsing Lee ,  Tsung-Min Hsieh ,  Jhyy-Cheng Liou

IPC: H04R25/00 ,  H04R17/02 ,  H04R3/00

CPC classification number: H04R19/04 ,  H04R19/005 ,  H04R31/006

Abstract: A MEMS device includes substrate having a cavity. A dielectric layer is disposed on a second side of substrate at periphery of the cavity. A backplate structure is formed with the dielectric layer on a first side of the substrate and exposed by the cavity. The backplate structure includes at least a first backplate and a second backplate. The first backplate and the second backplate are electric disconnected and have venting holes to connect the cavity and the chamber. A diaphragm is disposed above the backplate structure by a distance, so as to form a chamber between the backplate structure and the diaphragm. A periphery of the diaphragm is embedded in the dielectric layer. The diaphragm serves as a common electrode. The first backplate and the second backplate respectively serve as a first electrode unit and a second electrode unit in conjugation with the diaphragm to form separate two capacitors.

Abstract translation: MEMS器件包括具有空腔的衬底。 电介质层设置在空腔周边的衬底的第二面上。 背板结构形成有介电层在基板的第一面上并被空腔暴露。 背板结构至少包括第一背板和第二背板。 第一个背板和第二个背板是电气断开的，并具有连接空腔和腔室的排气孔。 隔膜设置在背板结构上方一段距离，以便在背板结构和隔膜之间形成一个室。 隔膜的周边嵌入在电介质层中。 隔膜用作公共电极。 第一背板和第二背板分别用作与隔膜共轭的第一电极单元和第二电极单元，以形成分开的两个电容器。

公开(公告)号：US20130260504A1

公开(公告)日：2013-10-03

申请号：US13906340

申请日：2013-05-31

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/00682 ,  H01G5/18 ,  H04R19/005 ,  H04R19/04

Abstract: Method is to fabricate a MEMS device with a substrate. The substrate has through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.

Abstract translation: 方法是制造具有衬底的MEMS器件。 衬底在膜片区域内的衬底中具有通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。 然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。 具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。