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公开(公告)号：US20210195340A1
公开(公告)日：2021-06-24
申请号：US16719941
申请日：2019-12-18
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Cheng-Wei Tsai , Chien-Hsing Lee
Abstract: In an embodiment, the invention provides a structure of MEMS microphone includes a substrate of semiconductor, having a first opening in the substrate. A dielectric layer is disposed on the substrate, having a dielectric opening. A diaphragm is within the dielectric opening and held by the dielectric layer at a peripheral region, wherein the diaphragm has a diaphragm opening. A back-plate is disposed on the dielectric layer, over the diaphragm. A protruding structure is disposed on the back-plate, protruding toward the diaphragm. At least one air valve plate is affixed on an end of the protruding structure within the diaphragm opening of the diaphragm. The air valve plate is activated when suffering an air flow with a pressure.
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公开(公告)号：US20190124452A1
公开(公告)日：2019-04-25
申请号：US16223124
申请日：2018-12-18
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Chien-Hsing Lee , Cheng-Wei Tsai
CPC classification number: H04R19/04 , B81B3/001 , B81B3/007 , B81B2201/0257 , B81B2203/0127 , B81C1/00984 , H04R31/003 , H04R2201/003
Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.
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3.发明授权公开(公告)号：US11498830B2
公开(公告)日：2022-11-15
申请号：US16812395
申请日：2020-03-09
Applicant: Solid State System Co., Ltd.
Inventor： Cheng-Wei Tsai , Tsung-Min Hsieh , Chien-Hsing Lee
Abstract: The invention provides a MEMS microphone. The MEMS microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer and covering over the second opening. The backplate layer includes a plurality of acoustic holes arranged into a regular array pattern. The regular array pattern comprises a pattern unit, the pattern unit comprises one of the acoustic holes as a center hole, and peripheral holes of the acoustic holes surrounding the center hole with a same pitch to the center hole.
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公开(公告)号：US10798493B2
公开(公告)日：2020-10-06
申请号：US16223124
申请日：2018-12-18
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Chien-Hsing Lee , Cheng-Wei Tsai
Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.
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5.发明申请MICROELECTROMECHANICAL SYSTEM (MEMS) MICROPHONE WITH PROTECTION FILM AND MEMS MICROPHONECHIPS AT WAFER LEVEL 有权具有保护膜和MEMS麦克风的微电子机电系统（MEMS）麦克风公开(公告)号：US20150118780A1
公开(公告)日：2015-04-30
申请号：US14066712
申请日：2013-10-30
Applicant: Solid State System Co., Ltd.
Inventor： Cheng-Wei Tsai , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC: H04R31/00
CPC classification number: H04R31/00 , H01L2224/48137 , H01L2924/16151 , H01L2924/16152 , H04R19/005 , H04R2201/003
Abstract: A method to protect an acoustic port of a microelectromechanical system (MEMS) microphone is provided. The method includes: providing the MEMS microphone; and forming a protection film, on the acoustic port of the MEMS microphone. The protection film has a porous region over the acoustic port to receive an acoustic signal but resist at least an intruding material. The protection film can at least endure a processing temperature of solder flow.
Abstract translation: 提供了保护微机电系统（MEMS）麦克风的声学端口的方法。 该方法包括：提供MEMS麦克风; 并在MEMS麦克风的声学端口上形成保护膜。 保护膜在声学端口上方具有多孔区域以接收声信号，但是至少阻挡入侵材料。 保护膜至少可以承受焊料流动的处理温度。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20210276857A1
公开(公告)日：2021-09-09
申请号：US16812395
申请日：2020-03-09
Applicant: Solid State System Co., Ltd.
Inventor： Cheng-Wei Tsai , Tsung-Min Hsieh , Chien-Hsing Lee
Abstract: The invention provides a MEMS microphone. The MEMS microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer and covering over the second opening. The backplate layer includes a plurality of acoustic holes arranged into a regular array pattern. The regular array pattern comprises a pattern unit, the pattern unit comprises one of the acoustic holes as a center hole, and peripheral holes of the acoustic holes surrounding the center hole with a same pitch to the center hole.
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公开(公告)号：US10250998B2
公开(公告)日：2019-04-02
申请号：US15335420
申请日：2016-10-26
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Chien-Hsing Lee , Cheng-Wei Tsai
Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.
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8.发明授权Microelectromechanical system (MEMS) microphone with protection film and MEMS microphonechips at wafer level 有权具有保护膜和MEMS麦克风芯片的微机电系统（MEMS）麦克风公开(公告)号：US09264832B2
公开(公告)日：2016-02-16
申请号：US14066712
申请日：2013-10-30
Applicant: Solid State System Co., Ltd.
Inventor： Cheng-Wei Tsai , Chien-Hsing Lee , Jhyy-Cheng Liou
CPC classification number: H04R31/00 , H01L2224/48137 , H01L2924/16151 , H01L2924/16152 , H04R19/005 , H04R2201/003
Abstract: A method to protect an acoustic port of a microelectromechanical system (MEMS) microphone is provided. The method includes: providing the MEMS microphone; and forming a protection film, on the acoustic port of the MEMS microphone. The protection film has a porous region over the acoustic port to receive an acoustic signal but resist at least an intruding material. The protection film can at least endure a processing temperature of solder flow.
Abstract translation: 提供了保护微机电系统（MEMS）麦克风的声学端口的方法。 该方法包括：提供MEMS麦克风; 并在MEMS麦克风的声学端口上形成保护膜。 保护膜在声学端口上方具有多孔区域以接收声信号，但是至少阻挡入侵材料。 保护膜至少可以承受焊料流动的处理温度。
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公开(公告)号：US20150315013A1
公开(公告)日：2015-11-05
申请号：US14328727
申请日：2014-07-11
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Chien-Hsing Lee , Cheng-Wei Tsai , Jhyy-Cheng Liou
CPC classification number: H04R19/005 , B81B7/0006 , B81B7/0058 , B81B2201/0257 , H04R23/006 , H04R2201/003 , H04R2460/11
Abstract: A micro-electrical-mechanical system (MEMS) microphone includes a MEMS structure, having a substrate, a diaphragm, and a backplate, wherein the substrate has a cavity and the backplate is between the cavity and the diaphragm. The backplate has multiple venting holes, which are connected to the cavity and allows the cavity to extend to the diaphragm. Further, an adhesive layer is disposed on the substrate, surrounding the cavity. A cover plate is adhered on the adhesive layer, wherein the cover plate has an acoustic hole, dislocated from the cavity without direct connection.
Abstract translation: 微电气机械系统（MEMS）麦克风包括具有基板，隔膜和背板的MEMS结构，其中基板具有空腔，并且背板位于空腔和隔膜之间。 背板具有多个通气孔，其连接到空腔并允许空腔延伸到隔膜。 此外，粘合层设置在基板上，围绕空腔。 盖板粘附在粘合剂层上，其中盖板具有声孔，从空腔脱位而没有直接连接。
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10.发明申请公开(公告)号：US20220127134A1
公开(公告)日：2022-04-28
申请号：US17081995
申请日：2020-10-27
Applicant: Solid State System Co., Ltd.
Inventor： Tsung-Min Hsieh , Chien-Hsing Lee , Cheng-Wei Tsai
Abstract: A structure of micro-electro-mechanical-system (MEMS) microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A membrane is disposed within the second opening of the dielectric layer. A peripheral region of the membrane is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer. The backplate layer includes a protection layer, having a peripheral region disposed on the dielectric layer and a central region with venting holes over the second opening. The central region of the protection layer further has anti-sticky structures at a side of the protection layer toward the membrane. An electrode layer is disposed on the side of the protection layer, surrounding the anti-sticky structures.
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