-
11.发明申请METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR 审中-公开交替耦合磁性多层结构与改进工作温度行为的方法与结构公开(公告)号：US20090121266A1
公开(公告)日：2009-05-14
申请号：US11938816
申请日：2007-11-13
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/303
摘要： Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer (108) and a synthetic antiferromagnet (SAF) structure (300) formed on the tunnel barrier layer (108), wherein the SAF (300) includes a plurality (e.g., four or more) of ferromagnetic layers (302, 306, 310, 314) antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers (304, 308, 312). The microcrystalline texture of one or more of the ferromagnetic layers is reduced to substantially zero as measured from X-Ray Diffraction by exposure of various layers to oxygen, by forming a detexturing layer, by adding oxygen during the ferromagnetic or coupling layer fabrication, and/or by using amorphous materials.
摘要翻译： 用于切换MRAM器件等的交换耦合磁性多层结构包括形成在隧道势垒层（108）上的隧道势垒层（108）和合成反铁磁体（SAF）结构（300），其中SAF（300） 包括由多个相应的耦合层（304,308,312）反铁磁或铁磁耦合的多个（例如，四个或更多个）铁磁层（302,306,310,314）。 一个或多个铁磁性层的微晶结构由X射线衍射测得的，通过各种氧气暴露于氧，通过在铁磁或耦合层制造过程中加入氧来形成去附着层，和/ 或通过使用无定形材料。
-
公开(公告)号：US06818961B1
公开(公告)日：2004-11-16
申请号：US10611789
申请日：2003-06-30
IPC分类号： H01L2982
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/18 , H01F41/303 , H01L43/12
摘要： A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
摘要翻译： 一种制造磁阻隧道结电池的方法，包括以下步骤：向衬底提供表面;将具有合成磁矩矢量的第一磁区（17）沉积到衬底上，将电绝缘材料（16）沉积到第一磁 并且将第二磁性区域（15）沉积到所述电绝缘材料上，其中所述第一和第二磁性区域中的一个的至少一部分相对于垂直于所述表面的方向以非零沉积角沉积所述区域而形成 的基底以产生诱导各向异性。
-
公开(公告)号：US07965543B2
公开(公告)日：2011-06-21
申请号：US12433670
申请日：2009-04-30
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1675
摘要： A method for reducing spin-torque current density needed to switch a magnetoelectronic device (200, 300, 400), includes applying (602) a voltage bias having a predetermined polarity to the magnetoelectronic device (200, 300, 400) that creates a spin-polarized current with spin torque transfer to a synthetic antiferromagnet free layer (206), applying (604) a magnetic field having a predetermined direction to the magnetoelectronic device (200, 300, 400), removing (606) the applied magnetic field; and removing (608) the voltage bias subsequent to removing (606) the applied magnetic field, wherein the polarity of the voltage bias and the direction of the magnetic field leave the synthetic antiferromagnet free layer (206) in a predetermined magnetic state after the voltage bias is removed.
摘要翻译： 一种用于减小切换磁电子器件（200,300,400）所需的自旋转矩电流密度的方法包括将具有预定极性的电压偏置（602）施加到产生旋转的磁电子器件（200,300,400）上 具有自旋转矩传递到合成反铁磁自由层（206）的偏振电流，向磁电子器件（200,300,400）施加（604）具有预定方向的磁场，去除（606）所施加的磁场; 以及在去除（606）所施加的磁场之后去除（608）所述电压偏置，其中所述电压偏置的极性和所述磁场的方向在所述电压之后离开所述合成的反铁磁自由层（206）处于预定的磁状态 偏移被去除。
-
公开(公告)号：US20080205130A1
公开(公告)日：2008-08-28
申请号：US11679982
申请日：2007-02-28
申请人： Jijun Sun , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Jijun Sun , Nicholas D. Rizzo , Jon M. Slaughter
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (Hki) while one or more of the remaining ferromagnetic layers has a low intrinsic anisotropy field Hki.
摘要翻译： 与切换MRAM器件等一起使用的磁隧道结（MTJ）结构包括形成在隧道势垒层上的隧道势垒层和合成反铁磁体（SAF）结构，其中SAF包括多个（例如三个或更多个） 铁磁层通过多个相应的耦合层反铁磁或铁磁耦合。 与隧道势垒层相邻的底部铁磁层具有高的自旋极化和高的本征各向异性场（H >Ki），而一个或多个剩余的铁磁层具有低的固有各向异性场H ki 。
-
公开(公告)号：US06898112B2
公开(公告)日：2005-05-24
申请号：US10322979
申请日：2002-12-18
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译： 可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。 与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。 在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。
-
公开(公告)号：US08237437B2
公开(公告)日：2012-08-07
申请号：US13023260
申请日：2011-02-08
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译： 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜被固定在不同的期望方向上。
-
17.发明授权Two-axis magnetic field sensor with substantially orthogonal pinning directions 有权两轴磁场传感器具有基本正交的钉扎方向公开(公告)号：US08257596B2
公开(公告)日：2012-09-04
申请号：US12433679
申请日：2009-04-30
CPC分类号： G01R31/318357 , B82Y25/00 , G01R33/072 , G01R33/093 , G01R33/098 , Y10T29/4902
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layer with a properly aligned orienting field (90) and then removing the orienting field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions by one of 1) tailoring the intrinsic anisotropy of the reference layer during the depositing step, 2) forming a long axes of one of the patterned shapes (62, 63) at a non-orthogonal angle to the long axes of the other patterned shape (62, 63) when etched, or 3) applying a compensating field when pinning the reference layers.
摘要翻译： 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对准的定向场（90）处理参考层，然后去除定向场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜通过以下步骤中的一种被钉扎在不同的期望方向：1）在沉积步骤期间调整参考层的固有各向异性; 2）形成一个图案形状（62,63）的长轴， 在蚀刻时与另一图案形状（62,63）的长轴成非正交角，或者3）在固定参考层时施加补偿场。
-
公开(公告)号：US20090279212A1
公开(公告)日：2009-11-12
申请号：US12117396
申请日：2008-05-08
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译： 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜被固定在不同的期望方向上。
-
公开(公告)号：US07098495B2
公开(公告)日：2006-08-29
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
发明人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer.Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.
-
公开(公告)号：US20090213503A1
公开(公告)日：2009-08-27
申请号：US12035011
申请日：2008-02-21
申请人： Jijun Sun , Jon M. Slaughter
发明人： Jijun Sun , Jon M. Slaughter
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46′, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46′, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46′) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46′, 47, 52, 62) and the tunneling barrier (16). Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr, NiFeX, CoFeX and CoFeBX (X═Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr) are useful for the further layer (44, 46, 46′, 47, 52, 62).
摘要翻译： 采用磁阻随机存取存储器（MRAM）和其它器件的电介质隧道势垒（16）的磁性隧道结（MTJ）（10）具有合成的反铁磁（SAF）结构（14,16），包括两个铁磁（ FM）层（26,41; 51,58; 61,68），由耦合层（38,56,66）分隔开。 通过提供另外的层（44,46,46'，47,52,62），例如，可以获得改善的磁阻（MR）比。 含有Ta，优选地通过FM层（41,30-2,54）与耦合层（38,56,66）间隔开。 另外的层（44,46,46'，47,52,62）可以是由FM层（30-2）或含Ta的FM合金层（46）覆盖的Ta粉化层（44），或 交错FM和N-FM层的叠层（46'），或其他组合（47,62）。 进一步提高这些益处，期望地在另一层（44,46,46'，47,52,62）和隧道势垒之间提供另一个FM层，例如CoFe，NiFe（30,30-1,51,61） （16）。 Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr，NiFeX，CoFeX和CoFeBX（X-Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr） （44,46,46'，47,52,62）。
-
-
-
-
-
-
-
-
-
搜索结果
35 条记录 (耗时 0.019 秒)