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公开(公告)号：US06818961B1
公开(公告)日：2004-11-16
申请号：US10611789
申请日：2003-06-30
IPC分类号： H01L2982
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/18 , H01F41/303 , H01L43/12
摘要： A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
摘要翻译： 一种制造磁阻隧道结电池的方法，包括以下步骤：向衬底提供表面;将具有合成磁矩矢量的第一磁区（17）沉积到衬底上，将电绝缘材料（16）沉积到第一磁 并且将第二磁性区域（15）沉积到所述电绝缘材料上，其中所述第一和第二磁性区域中的一个的至少一部分相对于垂直于所述表面的方向以非零沉积角沉积所述区域而形成 的基底以产生诱导各向异性。
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公开(公告)号：US07329935B2
公开(公告)日：2008-02-12
申请号：US11581951
申请日：2006-10-16
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.
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公开(公告)号：US07129098B2
公开(公告)日：2006-10-31
申请号：US10997118
申请日：2004-11-24
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−Nσsat)−(Hsw+Nσsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.
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4.发明授权Magnetoresistive random access memory with reduced switching field variation 失效具有减小的开关场变化的磁阻随机存取存储器公开(公告)号：US06967366B2
公开(公告)日：2005-11-22
申请号：US10648466
申请日：2003-08-25
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08
摘要： An array of multi-state, multi-layer magnetic memory devices (10) wherein each memory device comprises a nonmagnetic spacer region (22) and a free magnetic region (24) positioned adjacent to a surface of the nonmagnetic spacer region, the free magnetic region including a plurality of magnetic layers (36,34,38), wherein the magnetic layer (36) in the plurality of magnetic layers positioned adjacent to the surface of the nonmagnetic spacer region has a thickness substantially greater than a thickness of each of the magnetic layers (34,38) subsequently grown thereon wherein the thickness is chosen to improve the magnetic switching variation so that the magnetic switching field for each memory device in the array of memory devices is more uniform.
摘要翻译： 一种多状态多层磁存储器件阵列，其中每个存储器件包括非磁性间隔区域（22）和邻近非磁性间隔区域表面定位的自由磁区域（24），所述自由磁性区域 区域，其包括多个磁性层（36,34,38），其中位于所述非磁性间隔区域的表面附近的所述多个磁性层中的所述磁性层（36）的厚度基本上大于所述非磁性间隔区域的厚度 随后在其上生长的磁性层（34,38），其中选择厚度以改善磁切换变化，使得存储器件阵列中的每个存储器件的磁切换场更均匀。
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5.发明授权Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers 失效具有由多个子元件层形成的磁性层的磁电元件公开(公告)号：US06579625B1
公开(公告)日：2003-06-17
申请号：US09695467
申请日：2000-10-24
IPC分类号： G11B5127
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F10/32 , H01L27/222 , H01L43/08 , Y10T428/1171 , Y10T428/12465 , Y10T428/12639 , Y10T428/24942 , Y10T428/31
摘要： A magnetic layer (46) of a magnetoelectronics element (40) is provided that has a first sub-element layer (48) and a second sub-element layer (50). The first sub-element layer (48) is configured to have a first area and the second sub-element layer (50) is configured to have a second area that is less than the first area.
摘要翻译： 提供了具有第一子元件层（48）和第二子元件层（50）的磁电元件（40）的磁性层（46）。 第一子元件层（48）被配置为具有第一区域，并且第二子元件层（50）被配置为具有小于第一区域的第二区域。
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公开(公告)号：US07235408B2
公开(公告)日：2007-06-26
申请号：US11075587
申请日：2005-03-09
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译： 可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。 与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。 在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。
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公开(公告)号：US06898112B2
公开(公告)日：2005-05-24
申请号：US10322979
申请日：2002-12-18
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译： 可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。 与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。 在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。
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8.发明授权Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers 失效用于使用多个磁性层编程MRAM器件的导电互连的包层公开(公告)号：US06720597B2
公开(公告)日：2004-04-13
申请号：US10010363
申请日：2001-11-13
IPC分类号： H01L2976
CPC分类号： H01L27/222 , G11C11/16
摘要： A cladded conductive interconnect for programming a magnetoresistive memory device which includes a conductive material with a length, a first barrier conductive material positioned on the conductive material, and a multi-layer cladding region positioned along the length of the conductive material wherein the multi-layer cladding region includes N ferromagnetic layers, where N is a whole number greater than or equal to two, and wherein the multi-layer cladding region further includes at least one spacer layer, wherein the spacer layer can include a metal, an insulator, or an exchange interaction material, and wherein the spacer layer is sandwiched therebetween each adjacent ferromagnetic layer.
摘要翻译： 一种用于编程磁阻存储器件的包覆导电互连件，其包括具有长度的导电材料，位于导电材料上的第一阻挡导电材料，以及沿导电材料的长度定位的多层包覆区域，其中多层 包层区域包括N个铁磁层，其中N是大于或等于2的整数，并且其中所述多层包覆区域还包括至少一个间隔层，其中所述间隔层可以包括金属，绝缘体或 交换相互作用材料，并且其中间隔层夹在每个相邻的铁磁层之间。
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9.发明授权Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer 失效磁性随机存取存储器具有带铁磁覆层的数字线和位线公开(公告)号：US06430084B1
公开(公告)日：2002-08-06
申请号：US09940263
申请日：2001-08-27
IPC分类号： G11C1115
CPC分类号： G11C11/5607 , G11C11/16 , H01L27/222
摘要： A magneto-electronic component includes an electrically conductive layer for generating a magnetic field, a ferromagnetic cladding layer adjacent to the electrically conductive layer, and an antiferromagnetic layer adjacent to the ferromagnetic cladding layer.
摘要翻译： 磁电子部件包括用于产生磁场的导电层，与导电层相邻的铁磁性包层，以及与铁磁性包覆层相邻的反铁磁层。
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公开(公告)号：US07965077B2
公开(公告)日：2011-06-21
申请号：US12117396
申请日：2008-05-08
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译： 制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层 被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供 使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。 在加热和冷却时，铁磁膜被固定在不同的期望方向上。
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