公开(公告)号：US07718449B2

公开(公告)日：2010-05-18

申请号：US11588551

申请日：2006-10-27

申请人： Xiang Gao ,  Michael Sackrison

发明人： Xiang Gao ,  Michael Sackrison

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

摘要： A surface mount LED package having a tight footprint and small vertical image size is fabricated by a method comprising: forming light emitting diode chips each having a substrate and a plurality of layers configured to emit electroluminescence responsive to electrical energizing; forming electrical vias in a sub mount, the electrical vias passing from a front side of the sub-mount to a back-side of the sub-mount; flip chip bonding the light emitting diode chips on the front-side of the sub mount such that each light emitting diode chip electrically contacts selected electrical vias; thinning or removing the substrates of the flip-chip bonded light emitting diode chips; and after the thinning, disposing a phosphor over the flip chip bonded light emitting diode chips.

摘要翻译： 通过以下方法制造具有紧密占地面积和小垂直图像尺寸的表面贴装LED封装，其包括：形成各自具有基板的发光二极管芯片和被配置为响应于电激励发射电致发光的多个层; 在副安装座中形成电气通孔，所述电气通孔从所述副安装座的前侧穿过所述副安装座的后侧; 将发光二极管芯片的倒装芯片接合在子安装座的前侧，使得每个发光二极管芯片电接触所选择的电气通孔; 减薄或去除倒装芯片接合的发光二极管芯片的基板; 并且在变薄之后，在倒装芯片粘结的发光二极管芯片上设置荧光体。

公开(公告)号：US20070004088A1

公开(公告)日：2007-01-04

申请号：US11482363

申请日：2006-07-07

申请人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

发明人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).

摘要翻译： 在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。 附着的发光芯片（10）被封装。 使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。 子安装晶片（14）沿断裂引发沟槽（30,32）断裂。

公开(公告)号：US20060030125A1

公开(公告)日：2006-02-09

申请号：US10911052

申请日：2004-08-04

申请人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

发明人： Michael Sackrison ,  Xiang Gao ,  Bryan Shelton ,  Ivan Eliashevich

IPC分类号： H01L21/78

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).