Method for magnifying image by interpolation based on edge and corner
    13.
    发明授权
    Method for magnifying image by interpolation based on edge and corner 有权
    基于边和边的插值放大图像的方法

    公开(公告)号:US07492969B2

    公开(公告)日:2009-02-17

    申请号:US11305644

    申请日:2005-12-15

    IPC分类号: G06K9/32 G06K9/40

    CPC分类号: G06T3/403

    摘要: Provided is a method for magnifying an image by interpolation. The method including: a) setting m×m local windows and calculating a direction of each m×m local window; b) when a linear direction exists in an m×m local window, considering an edge exists; c) when a linear direction does not exist in the m×m local window, dividing the m×m local window into m/2×m/2 sub windows and calculating directions of the m/2×m/2 sub windows; d) when the directions of the m/2×m/2 sub windows exists toward the center of the m×m local window, considering a corner exists in the m×m local window; and e) selecting pixels located in a virtual line that goes along in the linear direction or in the directions to calculate a new pixel value by using the pixels.

    摘要翻译: 提供了一种通过插值来放大图像的方法。 该方法包括:a)设置mxm局部窗口并计算每个mxm局部窗口的方向; b)当在mxm局部窗口中存在线性方向时,考虑到边缘存在; c)当mxm局部窗口中不存在线性方向时,将mxm本地窗口划分为m / 2xm / 2子窗口并计算m / 2xm / 2子窗口的方向; d)当m / 2xm / 2子窗口的方向存在于mxm局部窗口的中心时,考虑到mxm局部窗口中存在一个角; 以及e)选择位于沿着线性方向或方向的虚拟线中的像素,以通过使用像素来计算新的像素值。

    Sputtering apparatus
    14.
    发明申请
    Sputtering apparatus 有权
    溅射装置

    公开(公告)号:US20050205421A1

    公开(公告)日:2005-09-22

    申请号:US11079288

    申请日:2005-03-15

    IPC分类号: G02F1/13 C23C14/34 C23C14/56

    摘要: A sputtering apparatus comprises a plurality of independent plasma generation regions formed in a single process chamber; a cathode disposed at an edge portion of each of the plurality of independent plasma generation regions; a gas supply line to supply a reaction gas to the plurality of independent plasma generation regions; and a shielding film disposed between the plurality of independent plasma generation regions to prevent reaction gases generated in the plurality of independent plasma generation regions from being mixed and introduced to an outside.

    摘要翻译: 溅射装置包括形成在单个处理室中的多个独立的等离子体产生区域; 设置在所述多个独立等离子体产生区域中的每一个的边缘部分处的阴极; 气体供给管线,用于向多个独立的等离子体产生区域提供反应气体; 以及设置在所述多个独立等离子体产生区域之间的屏蔽膜,以防止在所述多个独立等离子体产生区域中产生的反应气体被混合并引入到外部。

    Sputtering apparatus
    17.
    发明授权
    Sputtering apparatus 有权
    溅射装置

    公开(公告)号:US08303786B2

    公开(公告)日:2012-11-06

    申请号:US11079288

    申请日:2005-03-15

    IPC分类号: C23C14/34

    摘要: A sputtering apparatus comprises a plurality of independent plasma generation regions formed in a single process chamber; a cathode disposed at an edge portion of each of the plurality of independent plasma generation regions; a gas supply line to supply a reaction gas to the plurality of independent plasma generation regions; and a shielding film disposed between the plurality of independent plasma generation regions to prevent reaction gases generated in the plurality of independent plasma generation regions from being mixed and introduced to an outside.

    摘要翻译: 溅射装置包括形成在单个处理室中的多个独立的等离子体产生区域; 设置在所述多个独立等离子体产生区域中的每一个的边缘部分处的阴极; 气体供给管线,用于向多个独立的等离子体产生区域提供反应气体; 以及设置在所述多个独立等离子体产生区域之间的屏蔽膜,以防止在所述多个独立等离子体产生区域中产生的反应气体被混合并引入到外部。