利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.032 秒)

    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
    15.
    发明授权
    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
    距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US07626685B2

    公开(公告)日：2009-12-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08 ,  H01L31/062

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Non-volatile memory device and method of fabricating the same
    16.
    发明申请
    Non-volatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20090273054A1

    公开(公告)日：2009-11-05

    申请号：US12382106

    申请日：2009-03-09

    申请人： Suk-pil Kim ,  Won-joo Kim ,  Seung-hoon Lee

    发明人： Suk-pil Kim ,  Won-joo Kim ,  Seung-hoon Lee

    IPC分类号： H01L29/68

    CPC分类号： H01L27/115 ,  H01L27/11206 ,  H01L27/24

    摘要： A non-volatile memory device and methods of fabricating the device according to example embodiments involve a stacked layer structure. The non-volatile memory device may include at least one first horizontal electrode including a first sidewall and a second sidewall; at least one second horizontal electrode including a third sidewall and a fourth sidewall; wherein the third sidewall may be disposed to face the first sidewall; at least one vertical electrode may be interposed between the first sidewall and the third sidewall, in such a way as to cross or intersect each of the at least one first and second horizontal electrodes, and; at least one data storage layer that may be capable of locally storing a change of electrical resistance may be interposed where the at least one first horizontal electrode and the at least one vertical electrode cross or intersect and where the at least one horizontal electrode and the at least one vertical electrodes cross or intersect.

    摘要翻译： 根据示例实施例的非易失性存储器件和制造器件的方法涉及堆叠层结构。 非易失性存储器件可以包括至少一个包括第一侧壁和第二侧壁的第一水平电极; 至少一个第二水平电极，包括第三侧壁和第四侧壁; 其中所述第三侧壁可以被设置为面对所述第一侧壁; 至少一个垂直电极可以插入在第一侧壁和第三侧壁之间，以便使得至少一个第一和第二水平电极中的每一个交叉或相交， 可以插入至少一个能够局部存储电阻变化的数据存储层，其中至少一个第一水平电极和至少一个垂直电极交叉或相交，并且其中至少一个水平电极和at 至少一个垂直电极交叉或相交。

    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    17.
    发明授权
    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
    距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US08035806B2

    公开(公告)日：2011-10-11

    申请号：US12379021

    申请日：2009-02-11

    申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

    摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

    摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    19.
    发明申请
    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
    距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US20090284731A1

    公开(公告)日：2009-11-19

    申请号：US12379021

    申请日：2009-02-11

    申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

    摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

    摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS
    20.
    发明申请
    DISTANCE MEASURING SENSORS INCLUDING VERTICAL PHOTOGATE AND THREE-DIMENSIONAL COLOR IMAGE SENSORS INCLUDING DISTANCE MEASURING SENSORS 有权
    距离测量传感器包括垂直光子和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US20090244514A1

    公开(公告)日：2009-10-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Woo-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。