利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.026 秒)

    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    1.
    发明申请
    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
    距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US20090284731A1

    公开(公告)日：2009-11-19

    申请号：US12379021

    申请日：2009-02-11

    申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

    摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

    摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    4.
    发明授权
    Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
    距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US08035806B2

    公开(公告)日：2011-10-11

    申请号：US12379021

    申请日：2009-02-11

    申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

    IPC分类号： G01C3/08

    CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

    摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

    摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

    Image sensor having nanodot
    6.
    发明授权
    Image sensor having nanodot 失效
    具有纳米点的图像传感器

    公开(公告)号：US08143685B2

    公开(公告)日：2012-03-27

    申请号：US12508079

    申请日：2009-07-23

    申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

    摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

    摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。

    IMAGE SENSOR HAVING NANODOT
    8.
    发明申请
    IMAGE SENSOR HAVING NANODOT 失效
    具有NANODOT的图像传感器

    公开(公告)号：US20100019296A1

    公开(公告)日：2010-01-28

    申请号：US12508079

    申请日：2009-07-23

    申请人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    发明人： Dae-kil Cha ,  Young-gu Jin ,  Bok-ki Min ,  Yoon-dong Park

    IPC分类号： H01L31/112 ,  H01L31/0232

    CPC分类号： H01L27/14643 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/14625

    摘要： An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

    摘要翻译： 图像传感器包括排列成阵列的多个像素，每个像素包括第一区域和第二区域，第一区域和第二区域在半导体层中彼此分离，并且掺杂有彼此不同电导率的杂质 形成在第一和第二区域之间的光电转换区域和将入射光聚焦到光电转换区域上的至少一个金属纳米点。

    Semiconductor devices and semiconductor apparatuses including the same
    9.
    发明授权
    Semiconductor devices and semiconductor apparatuses including the same 失效
    包括其的半导体器件和半导体器件

    公开(公告)号：US08258542B2

    公开(公告)日：2012-09-04

    申请号：US12219990

    申请日：2008-07-31

    申请人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7391 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/84 ,  H01L27/1023 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/7841 ,  H01L29/8618

    摘要： Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.

    摘要翻译： 提供包括其的半导体器件和半导体器件。 半导体器件包括设置在半导体衬底上的主体区域，设置在半导体衬底上并位于体区域的相对侧上的栅极图案，以及设置在身体区域的上表面上的第一和第二杂质掺杂区域。 栅极图案可以与第一和第二杂质掺杂区域分开或大于期望的距离，使得栅极图案在垂直于第一和第二杂质的方向上不与第一和第二杂质掺杂区域重叠 掺杂区域。

    Semiconductor substrates and manufacturing methods of the same
    10.
    发明授权
    Semiconductor substrates and manufacturing methods of the same 有权
    半导体衬底及其制造方法相同

    公开(公告)号：US07902007B2

    公开(公告)日：2011-03-08

    申请号：US12219360

    申请日：2008-07-21

    申请人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7841

    摘要： Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

    摘要翻译： 提供半导体基板及其制造方法。 半导体衬底包括衬底区域，绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离，并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案，通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域，以及填充绝缘体 在浮体区域和衬底区域之间的材料。