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    Non-volatile memory devices having data storage layer
    4.
    发明授权
    Non-volatile memory devices having data storage layer 有权
    具有数据存储层的非易失性存储器件

    公开(公告)号：US08283711B2

    公开(公告)日：2012-10-09

    申请号：US12149209

    申请日：2008-04-29

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

    IPC分类号： H01L29/792

    CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

    Non-volatile memory device and method of fabricating the same
    8.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20090184360A1

    公开(公告)日：2009-07-23

    申请号：US12285403

    申请日：2008-10-03

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

    CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

    摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

    摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。

    Method of operating nonvolatile memory device
    9.
    发明申请
    Method of operating nonvolatile memory device 审中-公开
    操作非易失性存储器件的方法

    公开(公告)号：US20090109761A1

    公开(公告)日：2009-04-30

    申请号：US12076310

    申请日：2008-03-17

    申请人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

    发明人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

    IPC分类号： G11C16/20

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/10

    摘要： Provided is a method of operating a three-dimensional nonvolatile memory device which may increase the reliability and efficiency of the three-dimensional nonvolatile memory device. The method of operating a nonvolatile memory device may include: resetting the nonvolatile memory device by injecting charges into charge storage layers of a plurality of memory cells of a block; and setting the nonvolatile memory device by removing at least some of the charges injected into the charge storage layers of one or more memory cells selected from among the plurality of memory cells.

    摘要翻译： 提供了一种操作三维非易失性存储器件的方法，其可以增加三维非易失性存储器件的可靠性和效率。 操作非易失性存储器件的方法可以包括：通过向块的多个存储单元的电荷存储层注入电荷来复位非易失性存储器件; 以及通过去除从多个存储单元中选择的一个或多个存储单元的电荷存储层中注入的电荷中的至少一些电荷来设置非易失性存储器件。

    Non-volatile memory device and method of fabricating the same
    10.
    发明授权
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US07863672B2

    公开(公告)日：2011-01-04

    申请号：US12285403

    申请日：2008-10-03

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

    IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

    CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

    摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

    摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。