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54 条记录 (耗时 0.042 秒)

    THIN COOLING DEVICE
    14.
    发明申请
    THIN COOLING DEVICE 审中-公开
    薄冷却装置

    公开(公告)号：US20100108296A1

    公开(公告)日：2010-05-06

    申请号：US12507676

    申请日：2009-07-22

    申请人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

    发明人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

    IPC分类号： F28D15/04

    CPC分类号： F28D15/04 ,  F28D15/0233

    摘要： Provided is a vapor-liquid phase change cooling device, which may be manufactured with no limitation of thickness.The cooling device includes a first thin plate including a groove-shaped capillary region, an evaporator section for evaporating a working fluid injected from outside, and a condenser section having a vapor condensation space for condensing the evaporated working fluid, a second thin plate having a vapor pathway for transporting the evaporated working fluid to the condenser section, and a third thin plate having a liquid pathway for transporting the working fluid condensed in the condenser section to the evaporator section.

    摘要翻译： 提供一种气液相变冷却装置，可以制造而不限制厚度。 冷却装置包括：第一薄板，其包括槽状毛细管区域，用于蒸发从外部喷射的工作流体的蒸发器部分和具有用于冷凝蒸发的工作流体的蒸气冷凝空间的冷凝器部分;第二薄板，具有 用于将蒸发的工作流体输送到冷凝器部分的蒸气通道，以及具有用于将在冷凝器部分中冷凝的工作流体输送到蒸发器部分的液体通路的第三薄板。

    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines
    15.
    发明授权
    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines 有权
    具有连接到分离的井管线的铁电存储晶体管的铁电存储器件

    公开(公告)号：US06411542B1

    公开(公告)日：2002-06-25

    申请号：US09966112

    申请日：2001-10-01

    申请人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    发明人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory device including a single ferroelectric transistor that one unit memory cell is independently selected and programmed, when the unit memory cell is programmed for “the first state” or “the second state” by applying a DC bias voltage to the single ferroelectric transistor's gate and well. In addition, the ferroelectric memory device can be applied with normal power level Vdd and GND. The ferroelectric memory device includes a plurality of unit memory cells which are arranged in a matrix, by crossing at least one word line in a column direction with a plurality of bit lines and source lines in a row direction and is connected between the source line and the bit line.

    摘要翻译： 当单位存储单元被编程为“第一状态”或“第二状态”时，包括单个存储单元被独立地选择和编程的单个铁电晶体管的铁电存储器件通过将DC偏置电压施加到单个铁电晶体管 门和井。 此外，铁电存储器件可以应用正常的功率电平Vdd和GND。 铁电存储器件包括多个单元存储单元，它们以矩阵形式布置，使列方向上的至少一个字线与行方向上的多个位线和源极线相交，并连接在源极线和 位线。

    Active matrix organic light emitting diode
    19.
    发明授权
    Active matrix organic light emitting diode 有权
    有源矩阵有机发光二极管

    公开(公告)号：US08476622B2

    公开(公告)日：2013-07-02

    申请号：US13343384

    申请日：2012-01-04

    申请人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

    发明人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/20 ,  H01L33/00 ,  H01L29/201

    CPC分类号： H01L51/5284 ,  H01L27/1218 ,  H01L27/322 ,  H01L27/326 ,  H01L29/78633 ,  H01L29/7869

    摘要： Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

    摘要翻译： 公开了有源矩阵有机发光二极管及其制造方法。 有源矩阵有机发光二极管包括：基板; 形成在基板的一部分上方的黑色矩阵; 形成在黑矩阵上方的至少一个薄膜晶体管; 形成为完全覆盖所述至少一个薄膜晶体管的钝化膜; 形成在钝化膜上方的平坦化层; 形成在所述平坦化层的与形成有所述至少一个薄膜晶体管的位置相反的上方的滤色器; 以及形成在滤色器上方的有机发光二极管。

    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    20.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20090184307A1

    公开(公告)日：2009-07-23

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L21/06 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态 作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态 非晶态。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。