Tunnel magnetoresistive effect element, magnetic memory, and built-in memory

    公开(公告)号:US11114609B2

    公开(公告)日:2021-09-07

    申请号:US16082913

    申请日:2017-11-08

    Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that is disposed on a side surface of the magnetic tunnel junction, a cap layer that covers a top surface of the magnetic tunnel junction and a surface of the side wall portion, and an upper electrode layer that is disposed on the cap layer. The cap layer includes an upper surface and a lower surface. The upper surface has a protruding shape that protrudes in a direction away from the magnetic tunnel junction in a first region which is positioned immediately above the top surface of the magnetic tunnel junction. The upper surface has a recess that is recessed in a direction toward the side wall portion in a second region which is positioned immediately above the surface of the side wall portion.

    Spin current magnetization rotational element

    公开(公告)号:US10454023B2

    公开(公告)日:2019-10-22

    申请号:US15976997

    申请日:2018-05-11

    Abstract: A spin current magnetization rotational element includes: a ferromagnetic metal layer; a spin-orbit torque wiring configured to extend in a first direction perpendicular to a lamination direction of the ferromagnetic metal layer and formed on one surface of the ferromagnetic metal layer; and a ferromagnetic electrode layer formed outside the ferromagnetic metal layer on any of surfaces of the spin-orbit torque wiring in a top view from the lamination direction. A direction of magnetization of the ferromagnetic metal layer is changeable by spin-orbit torque generated by a spin-orbit interaction in the spin-orbit torque wiring and an influence of spin diffused from the ferromagnetic electrode layer.

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