公开(公告)号：US20120220089A1

公开(公告)日：2012-08-30

申请号：US13325972

申请日：2011-12-14

申请人： Tadahiro IMADA ,  Toshihide Kikkawa

发明人： Tadahiro IMADA ,  Toshihide Kikkawa

IPC分类号： H01L21/336 ,  H02J3/36 ,  H03F3/16 ,  H01L29/78

CPC分类号： H01L29/7787 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66462 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/181 ,  H03F1/3247 ,  H03F1/523 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/204 ,  H03F2200/426 ,  H03F2200/444 ,  H03F2200/451 ,  H01L2924/00 ,  H01L2924/00012

摘要： A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation film, and also a field plate electrode that comes in Schottky contact with the structure of the stacked compound semiconductors is formed by embedding an electrode material in a recess for an electrode, which has been formed in the structure of the stacked compound semiconductors so that the field plate electrode directly comes in contact with the structure of the stacked compound semiconductors at least on the bottom face of the recess for the electrode.

摘要翻译： 形成栅电极，以便通过栅极绝缘膜将电极材料嵌入已形成为叠层化合物半导体的结构的电极用凹部中，并且还形成与电极的肖特基接触的场板电极 堆叠的化合物半导体的结构通过将电极材料嵌入到在层叠的化合物半导体的结构中形成的电极的凹部中而形成，使得场板电极直接与堆叠的化合物半导体的结构接触 至少在用于电极的凹槽的底面上。

公开(公告)号：US20120139008A1

公开(公告)日：2012-06-07

申请号：US13396899

申请日：2012-02-15

申请人： Tadahiro IMADA ,  Atsushi Yamada

发明人： Tadahiro IMADA ,  Atsushi Yamada

IPC分类号： H01L29/778 ,  H01L21/338

CPC分类号： H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7832

摘要： An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode.

摘要翻译： 在i-GaN层（电子传输层）上形成的i-GaN层（电子迁移层），n-GaN层（化合物半导体层）以及形成在n-GaN层上的源电极，漏电极和栅电极 -GaN层（化合物半导体层）。 在n-GaN层（化合物半导体层）的源电极和漏电极之间的区域内以及与栅电极分离的部分的内部形成有凹部。