Abstract:
The light receiving device includes a pixel array, such as a two-dimensional pixel array, of pixels each having a light-receiving element for receiving input signal light, an output selecting unit for selecting the outputs of pixels within the pixel array, a selected output adding unit for adding and outputting the selected outputs of the pixels, and an amplifying unit for amplifying the output of the selected output adding unit.
Abstract:
First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
Abstract:
A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.
Abstract:
A solid-state image pickup apparatus includes a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit. The control units includes an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels. The control unit controls the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.
Abstract:
A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region 10 in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region 12 in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2 in the pixel region PW1 is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2 of the pixel region 10, and a photodiode region PHD2 is embedded below the transistor well region PW2.
Abstract:
A wireless distance measurement system and a wireless distance measurement method that measure the distance between a base station and a terminal without clock synchronization between a plurality of base stations, and without requiring input of the position relationships between a plurality of base stations. Clock phase shift section (210) shifts a clock that is used to generate transmission pulses is phase-shifted by a specific amount every 100 nanoseconds, and A/D conversion section (211) converts a signal re-radiated from terminal (103) to a digital signal using the shifted clock. Correlation calculation section (212) performs correlation calculation between the digital signal and the transmission pulse and creates a delay profile by adding digital signals in the shifted phases between same phases, and incoming wave detection section (213) detects peaks of the pulses in the delay profile. Distance calculation section (214) calculates the distance to terminal (103) based on the timings to transmit the pulses and the timings to detect peaks of the pulses.
Abstract:
A solid-state image pickup apparatus comprises a pixel unit consisting of a plurality of pixels; a pixel control unit for controlling the plurality of pixels; a readout unit for reading a signal of each pixel output from the pixel unit; a shutter unit for establishing a state of a light incident to the pixel unit and that of shielding the pixel unit from the light; and a control unit, comprising an exposure mode changeover unit for changing over an exposure mode to either a first exposure mode performing a simultaneous exposure for all pixels or a second exposure mode performing an exposure for each of a predetermined unit of pixels, for controlling the pixel control unit, readout unit and shutter unit according to an exposure mode changed over by the exposure mode changeover unit.
Abstract:
Using a switching signal from a coarse/fine switching and operation mode switching circuit, the width of change of a counter control value during power up is increased, and the width of change is reduced once a steady state is reached. In the steady state, the frequency of updating is limited by a control signal from an update permit control circuit. In the steady state, the frequency band of a current source in an LD driving circuit is reduced in width.
Abstract:
A CMOS image sensor of the present invention comprises an array of a picture element circuit, a unit of correlated double sampling one picture element line of the array, a charge pump type voltage up unit of supplying a predetermined step-up voltage to the picture element circuit that forms an array and a prevention unit of preventing the noise caused by a pumping operation of the charge pump type voltage up unit. The prevention unit may be a prohibition unit of prohibiting a pumping operation of the charge pump type voltage up unit. In the case where the charge pump type voltage up unit comprises a voltage up circuit for assigning a voltage up output in accordance with an assigned clock and a clock generation circuit for generating a clock in such a way that the voltage up output matches with the predetermined upped voltage, the prohibition unit of prohibiting a pumping operation may comprise a not-assignment unit of not assigning an output of the clock generation unit to the voltage up circuit.
Abstract:
A shift register outputs a selection signal for selection of a horizontal sequence of pixels of a two-dimensional pixel array, and includes a vertical shift register for applying a selection signal to the pixel array from either the outer left side or the outer right side of the pixel array, and a voltage applying device for applying a power supply voltage for reading data for a horizontal sequence of pixels from an opposite side of a supply of the selection signal to the pixel array after the selection signal is output.