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    METHOD FOR MANUFACTURING FLEXIBLE DISPLAY
    11.
    发明申请
    METHOD FOR MANUFACTURING FLEXIBLE DISPLAY 审中-公开
    制造柔性显示的方法

    公开(公告)号：US20090298211A1

    公开(公告)日：2009-12-03

    申请号：US12397594

    申请日：2009-03-04

    申请人： Tae-Woong Kim ,  Dong-Un Jin ,  Hyung-Sik Kim ,  Hyun-Woo Koo ,  Hyun-Chul Lee ,  Yeon-Gon Mo

    发明人： Tae-Woong Kim ,  Dong-Un Jin ,  Hyung-Sik Kim ,  Hyun-Woo Koo ,  Hyun-Chul Lee ,  Yeon-Gon Mo

    IPC分类号： H01L51/56

    CPC分类号： H01L51/56 ,  H01L2227/326

    摘要： A method for manufacturing a flexible display is provided. A sacrificial layer is formed on a substrate support, the sacrificial layer having an absorptivity of 1 E+02 to 1 E+06 cm−1 as a function of the wavelength of a laser. A flexible substrate is formed on the sacrificial layer. A device is formed on the flexible substrate. Laser irradiating is performed on a rear of the substrate support for detaching the sacrificial layer from the flexible substrate.

    摘要翻译： 提供一种制造柔性显示器的方法。 牺牲层形成在衬底支撑件上，牺牲层的吸收率为1E + 02至1E + 06cm-1，作为激光波长的函数。 在牺牲层上形成柔性基板。 在柔性基板上形成器件。 在基板支撑件的后部执行激光照射，以将牺牲层与柔性基板分离。

    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号：US20130248891A1

    公开(公告)日：2013-09-26

    申请号：US13609439

    申请日：2012-09-11

    申请人： Tae-Woong Kim ,  Hyun-Woo Koo ,  Hyung-Sik Kim

    发明人： Tae-Woong Kim ,  Hyun-Woo Koo ,  Hyung-Sik Kim

    IPC分类号： H01L51/50 ,  H01L51/56

    CPC分类号： H01L51/5253 ,  H01L27/3246 ,  H01L51/0097 ,  H01L51/5012 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/56 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

    摘要： An organic light emitting display device and a method of manufacturing the same are proposed. The organic light emitting display device includes: a first film formed of an organic material, and having first and second surfaces facing each other and a third surface perpendicular to the first and second surfaces; a second film formed on the first film to cover the second and third surfaces of the first film; an organic light emitting unit disposed on the second film; a third film disposed on the second film to cover the organic light emitting unit; and a fourth film disposed on the third film, formed of an organic material, and having fourth and fifth surfaces facing each other, wherein the fifth surface faces the third film.

    摘要翻译： 提出了一种有机发光显示装置及其制造方法。 有机发光显示装置包括：由有机材料形成的第一膜，具有彼此面对的第一表面和第二表面以及垂直于第一表面和第二表面的第三表面; 形成在第一膜上以覆盖第一膜的第二和第三表面的第二膜; 设置在所述第二膜上的有机发光单元; 设置在所述第二膜上以覆盖所述有机发光单元的第三膜; 以及第四膜，其设置在由有机材料形成的第三膜上，并且具有彼此面对的第四和第五表面，其中第五表面面向第三膜。

    Method of manufacturing flat panel display device
    13.
    发明授权
    Method of manufacturing flat panel display device 有权
    制造平板显示装置的方法

    公开(公告)号：US08292684B2

    公开(公告)日：2012-10-23

    申请号：US12485380

    申请日：2009-06-16

    申请人： Hyung-Sik Kim ,  Jin-Han Park ,  Joon-Hyung Kim ,  Hyun-Chul Lee ,  Sung-Gon Kim ,  Tae-Wook Kang ,  Jong-Dae Kim ,  Gyoo-Wan Han ,  Cheol-Lae Roh

    发明人： Hyung-Sik Kim ,  Jin-Han Park ,  Joon-Hyung Kim ,  Hyun-Chul Lee ,  Sung-Gon Kim ,  Tae-Wook Kang ,  Jong-Dae Kim ,  Gyoo-Wan Han ,  Cheol-Lae Roh

    IPC分类号： H01J9/24 ,  H01J9/26

    CPC分类号： H01L51/56 ,  C03C8/24 ,  C03C27/06 ,  C03C2218/34 ,  H01L51/5246 ,  H01L2251/566

    摘要： To minimize stress variations applied to mother glasses when a glass sealing material is melted via a laser to combine the mother glasses, a method of manufacturing a flat panel display device includes providing a plurality of emission units between a first substrate and a second substrate, wherein the first substrates faces the second substrate and each emission unit forms a unit display device; providing a plurality of walls between the first substrate and the second substrate, wherein each wall respectively surrounds one of the emission units; irradiating a laser beam onto the walls, wherein the laser beam is simultaneously irradiated to wall portions aligned in a row in a first direction; scanning the laser beam in a second direction, wherein the second direction is different from the first direction to irradiate other wall portions of the plurality of walls; and cutting the first and second substrates to obtain individual display devices.

    摘要翻译： 为了最小化通过激光熔化玻璃密封材料以组合母眼镜时应用于母眼镜的应力变化，制造平板显示装置的方法包括在第一基板和第二基板之间提供多个发射单元，其中 第一基板面对第二基板，每个发光单元形成单元显示装置; 在所述第一基板和所述第二基板之间提供多个壁，其中每个壁分别围绕所述发射单元中的一个; 将激光束照射到所述壁上，其中所述激光束同时沿着在第一方向上排列成一列的壁部照射; 沿第二方向扫描激光束，其中第二方向与第一方向不同以照射多个壁的其它壁部分; 并切割第一和第二基板以获得单独的显示装置。

    Laser induced thermal imaging method, method of patterning organic layer using the same and method of fabricating organic light emitting diode display device using the same
    16.
    发明授权
    Laser induced thermal imaging method, method of patterning organic layer using the same and method of fabricating organic light emitting diode display device using the same 有权
    激光感应热成像方法，使用该方法的有机层图案化方法以及使用其制造有机发光二极管显示装置的方法

    公开(公告)号：US08409788B2

    公开(公告)日：2013-04-02

    申请号：US12912243

    申请日：2010-10-26

    申请人： Hyun-Chul Lee ,  Jin-Han Park ,  Hyung-Sik Kim ,  Won-Kyu Lim ,  Cheol-Lae Roh

    发明人： Hyun-Chul Lee ,  Jin-Han Park ,  Hyung-Sik Kim ,  Won-Kyu Lim ,  Cheol-Lae Roh

    IPC分类号： G03F7/20

    CPC分类号： H01L51/0013 ,  B41M5/38214 ,  C23C14/048 ,  H01L27/3211 ,  H01L51/56

    摘要： A laser induced thermal imaging (LITI) method, a method of patterning an organic layer using the same and a method of manufacturing an organic light emitting diode (OLED) display device using the same. The LITI method includes preparing a substrate including a transfer layer, preparing a donor substrate including a base film and a light-to-heat conversion layer disposed on the base film, aligning the substrate with the donor substrate, and irradiating laser to the base layer of the donor substrate. Here, the laser is irradiated to the base layer in a region excluding a region corresponding to a pattern to be formed on the substrate. Thus, according to the method, regardless of the size of the pattern to be formed and the size of the laser beam, stitching mura can be prevented.

    摘要翻译： 激光诱导热成像（LITI）方法，使用该方法对有机层进行图案化的方法和使用其的有机发光二极管（OLED）显示装置的制造方法。 LITI方法包括制备包括转移层的基材，制备包括基膜的施主基板和设置在基膜上的光热转换层，使基板与施主基板对准，并将激光照射到基层 的供体底物。 这里，激光在与形成在基板上的图案对应的区域以外的区域照射到基底层。 因此，根据该方法，不管要形成的图案的尺寸和激光束的尺寸如何，都可以防止缝合。

    PIXEL OF IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    17.
    发明申请
    PIXEL OF IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 有权
    图像传感器的像素及其制造方法

    公开(公告)号：US20130059413A1

    公开(公告)日：2013-03-07

    申请号：US13666516

    申请日：2012-11-01

    申请人： Woon-Il Choi ,  Hyung-Sik Kim ,  Ui-Sik Kim

    发明人： Woon-Il Choi ,  Hyung-Sik Kim ,  Ui-Sik Kim

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14609 ,  H01L21/02129 ,  H01L27/14643 ,  H01L27/14689

    摘要： A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

    摘要翻译： 图像传感器的像素包括多晶硅层和需要与多晶硅层电耦合的有源区域，其中多晶硅层在有源区域的一部分上延伸，使得多晶硅层和有源区域部分地 重叠，并且多晶硅层和有源区通过掩埋接触结构耦合。

    Laser irradiation apparatus and method of manufacturing display device using the same
    19.
    发明申请
    Laser irradiation apparatus and method of manufacturing display device using the same 有权
    激光照射装置及使用其的显示装置的制造方法

    公开(公告)号：US20100282724A1

    公开(公告)日：2010-11-11

    申请号：US12662799

    申请日：2010-05-04

    申请人： Hyung-Sik Kim ,  Alexander Voronov ,  Jin-Han Park ,  Hyun-Chul Lee ,  Tae-Wook Kang ,  Jong-Dae Kim ,  Gyoo-Wan Han ,  Cheol-Lae Roh

    发明人： Hyung-Sik Kim ,  Alexander Voronov ,  Jin-Han Park ,  Hyun-Chul Lee ,  Tae-Wook Kang ,  Jong-Dae Kim ,  Gyoo-Wan Han ,  Cheol-Lae Roh

    IPC分类号： B23K26/00

    CPC分类号： B23K26/066 ,  B23K26/082 ,  B23K26/206 ,  H01L51/5246

    摘要： A laser irradiation apparatus for bonding a first substrate and a second substrate of a display device by melting a plurality of bonding members disposed between the first and second substrates to define cells when the display device is manufactured, the display device including light emitting elements disposed on a surface of the first substrate such that the bonding members respectively encompass lateral regions of the light emitting elements, the laser irradiation apparatus including a stage on which the first substrate is mounted, a laser oscillation member configured to irradiate a laser beam that melts the bonding members disposed between the first substrate and the second substrate, and a scanner configured to irradiate the laser beam incident from the laser oscillation member onto the bonding members, the scanner being configured to sequentially irradiate the laser beam on portions of the bonding members.

    摘要翻译： 一种激光照射装置，其用于通过熔化设置在第一和第二基板之间的多个接合构件来接合显示装置的第一基板和第二基板，以在制造显示装置时限定单元，该显示装置包括设置在显示装置上的发光元件 所述第一基板的表面使得所述接合部件分别包围所述发光元件的横向区域，所述激光照射装置包括其上安装有所述第一基板的台，激光振荡部件，被配置为照射熔化所述接合的激光束 设置在所述第一基板和所述第二基板之间的部件，以及扫描器，被配置为将从所述激光振荡部件入射的激光束照射到所述接合部件上，所述扫描器被配置为在所述接合部件的部分上顺序地照射所述激光束。

    Method of forming a polysilicon layer
    20.
    发明授权
    Method of forming a polysilicon layer 失效
    形成多晶硅层的方法

    公开(公告)号：US06498082B1

    公开(公告)日：2002-12-24

    申请号：US09643730

    申请日：2000-08-23

    申请人： Won-Joon Ho ,  Hyung-Sik Kim

    发明人： Won-Joon Ho ,  Hyung-Sik Kim

    IPC分类号： H01L213205

    CPC分类号： H01L29/4925 ,  H01L21/28035 ,  H01L21/32055

    摘要： A method of forming a polysilicon layer includes the steps of: loading a semiconductor substrate in a CVD reactor wherein a gate insulating layer is formed on the substrate; decompressing the reactor; depositing a first polysilicon layer on the substrate by flowing an SiH4 gas into the reactor; forming a plurality of Si—N bonds on the first polysilicon layer by maintaining atmospheric pressure of the reactor by filling the reactor with nitrogen gas; decompressing the reactor; and depositing a second polysilicon layer on the first polysilicon layer by flowing SiH4 gas into the reactor.

    摘要翻译： 形成多晶硅层的方法包括以下步骤：将半导体衬底装载在CVD反应器中，其中栅极绝缘层形成在衬底上; 减压反应器; 通过使SiH 4气体流入反应器而在衬底上沉积第一多晶硅层; 通过用氮气填充反应器来保持反应器的大气压在第一多晶硅层上形成多个Si-N键; 减压反应器; 以及通过将SiH 4气体流入反应器而在第一多晶硅层上沉积第二多晶硅层。