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    ISOLATION STRUCTURE AND IMAGE SENSOR
    12.
    发明申请
    ISOLATION STRUCTURE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20190139998A1

    公开(公告)日：2019-05-09

    申请号：US16222649

    申请日：2018-12-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
    15.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号：US20150130002A1

    公开(公告)日：2015-05-14

    申请号：US14080611

    申请日：2013-11-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

    Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅，不透光层和多个滤色器。 在图像传感器中，栅格具有顶表面，并且不透光层设置在栅格的顶表面上。 由于栅格上的不透光层，入射到电网中的入射光可被遮光层阻挡，使得串扰效应显着降低。 此外，本文还提供了一种用于制造图像传感器的方法。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF
    16.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号：US20150130001A1

    公开(公告)日：2015-05-14

    申请号：US14080555

    申请日：2013-11-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen Huang ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

    Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

    Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅和多个滤色器。 在图像传感器中，格栅具有设置在第一部分上的第一部分和第二部分。 网格的第二部分可以使针对一个图像传感器元件的入射光的反射或折射返回到相同的图像传感器元件中，以避免串扰发生。 此外，本文还提供了一种用于制造图像传感器的方法。

    IMAGE SENSOR DEVICE
    17.
    发明公开
    IMAGE SENSOR DEVICE 审中-公开

    公开(公告)号：US20230387169A1

    公开(公告)日：2023-11-30

    申请号：US18362866

    申请日：2023-07-31

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146 ,  H01L31/036

    CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L27/1464 ,  H01L31/036 ,  H01L27/14629 ,  H01L27/14607

    Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD
    18.
    发明申请
    INTEGRATED CIRCUIT STRUCTURE, DEVICE, AND METHOD 有权

    公开(公告)号：US20210327947A1

    公开(公告)日：2021-10-21

    申请号：US16850524

    申请日：2020-04-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Kun-Huei LIN ,  Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chun-Wei CHIA

    IPC: H01L27/146

    Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

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