公开(公告)号：US20210407947A1

公开(公告)日：2021-12-30

申请号：US16917640

申请日：2020-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chi CHEN ,  Hsun-Ying HUANG ,  Chih-Ming LEE ,  Shang-Yen WU ,  Chih-An YANG ,  Hung-Wei HO ,  Chao-Ching CHANG ,  Tsung-Wei HUANG

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/488

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.

公开(公告)号：US20200035732A1

公开(公告)日：2020-01-30

申请号：US16595729

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.

公开(公告)号：US20200343282A1

公开(公告)日：2020-10-29

申请号：US16926672

申请日：2020-07-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.

公开(公告)号：US20190148450A1

公开(公告)日：2019-05-16

申请号：US15809458

申请日：2017-11-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer and a trench isolation. The semiconductor substrate has a front side surface and a back side surface opposite to the front side surface. The radiation sensing member is disposed in a photosensitive region of the semiconductor substrate and extends from the front side surface of the semiconductor substrate. The radiation sensing member includes a semiconductor material with an optical band gap energy smaller than 1.77 eV. The device layer is over the front side surface of the semiconductor substrate and the radiation sensing member. The trench isolation is disposed in an isolation region of the semiconductor substrate and extends from the back side surface of the semiconductor substrate.

公开(公告)号：US20190139998A1

公开(公告)日：2019-05-09

申请号：US16222649

申请日：2018-12-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.

公开(公告)号：US20240088195A1

公开(公告)日：2024-03-14

申请号：US18511731

申请日：2023-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/103

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14698 ,  H01L31/035272 ,  H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/0336

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

公开(公告)号：US20200266225A1

公开(公告)日：2020-08-20

申请号：US16867997

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

公开(公告)号：US20200212244A1

公开(公告)日：2020-07-02

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting KAO ,  Yen-Liang LIN ,  Wen-I HSU ,  Hsun-Ying HUANG ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L31/107 ,  H01L31/0216 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.

公开(公告)号：US20190157334A1

公开(公告)日：2019-05-23

申请号：US16055758

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Hsin-Chi CHEN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Yen-Liang LIN

IPC: H01L27/146

Abstract: The present disclosure is directed to anchor structures and methods for forming anchor structures such that planarization and wafer bonding can be uniform. Anchor structures can include anchor layers formed on a dielectric layer surface and anchor pads formed in the anchor layer and on the dielectric layer surface. The anchor layer material can be selected such that the planarization selectivity of the anchor layer, anchor pads, and the interconnection material can be substantially the same as one another. Anchor pads can provide uniform density of structures that have the same or similar material.

公开(公告)号：US20190067354A1

公开(公告)日：2019-02-28

申请号：US15683900

申请日：2017-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: Structures and formation methods of a light-sensing device are provided. The light-sensing device includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The light-sensing device also includes a light-reflective element over the semiconductor substrate. The light-sensing region is between the light-reflective element and a light-receiving surface of the semiconductor substrate. The light-reflective element includes a stack of multiple pairs of dielectric layers. Each of the pairs has a first dielectric layer and a second dielectric layer, and the first dielectric layer has a different refractive index than that of the second dielectric layer.