公开(公告)号：US20240392464A1

公开(公告)日：2024-11-28

申请号：US18789269

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zong-Kun LIN ,  Hsuan-Chih CHU ,  Chien-Hsun PAN ,  Yen-Yu CHEN ,  Yi-Ming DAI

IPC: C25D21/06 ,  B01D61/18 ,  B01D63/16

Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

公开(公告)号：US20240387156A1

公开(公告)日：2024-11-21

申请号：US18789253

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54

Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

公开(公告)号：US20240271314A1

公开(公告)日：2024-08-15

申请号：US18167755

申请日：2023-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Zong-Kun LIN

IPC: C25D21/08 ,  C25D17/02

CPC classification number: C25D21/08 ,  C25D17/02

Abstract: The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

公开(公告)号：US20230383400A1

公开(公告)日：2023-11-30

申请号：US18447911

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

IPC: C23C14/56 ,  B08B7/02 ,  B08B5/02 ,  B08B7/04 ,  B08B9/00 ,  C23C14/34 ,  C23C14/50 ,  B08B13/00

CPC classification number: C23C14/564 ,  B08B7/028 ,  B08B5/02 ,  B08B7/04 ,  B08B9/00 ,  C23C14/34 ,  C23C14/50 ,  B08B13/00 ,  B08B2209/005

Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

公开(公告)号：US20220356578A1

公开(公告)日：2022-11-10

申请号：US17872945

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Yi-Ming DAI ,  Yen-Yu CHEN ,  Hsuan-Chih CHU

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/44

Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.