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公开(公告)号：US20210388524A1
公开(公告)日：2021-12-16
申请号：US16901967
申请日：2020-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Zong-Kun LIN , Hsuan-Chih CHU , Chien-Hsun PAN , Yen-Yu CHEN , Yi-Ming DAI
Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.
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公开(公告)号：US20240003993A1
公开(公告)日：2024-01-04
申请号：US17855517
申请日：2022-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
Abstract: A thin-film deposition system includes a thin-film deposition chamber. A magnetron assembly is positioned within the thin-film deposition chamber to assist in thin-film deposition processes. A magnetic sensor apparatus is positioned adjacent to the magnetron assembly. The magnetic sensor apparatus includes a plurality of magnetic sensors that each sense the magnetic field in a particular location within the thin-film deposition chamber. The control system generates a magnetic field distribution based on the sensor signals from the magnetic sensors. An analysis model that has been trained with a machine learning process analyzes the magnetic field distribution and determines whether or not an abnormal magnetic field distributions process. The control system can stop the thin-film deposition process based on the output of the analysis model.
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公开(公告)号：US20230352350A1
公开(公告)日：2023-11-02
申请号：US18341506
申请日：2023-06-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN , Yi-Ming DAI
CPC classification number: H01L22/26 , C23C14/351 , C23C14/545 , H01J37/32715 , H01J37/3455 , H01J37/3458
Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.
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公开(公告)号：US20230298916A1
公开(公告)日：2023-09-21
申请号：US18324894
申请日：2023-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
IPC: H01L21/67 , H01L21/324 , H01L21/66
CPC classification number: H01L21/67248 , H01L21/324 , H01L21/67103 , H01L22/26 , H01L21/67011
Abstract: A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.
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公开(公告)号：US20230022509A1
公开(公告)日：2023-01-26
申请号：US17384310
申请日：2021-07-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.
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Patent Agency Ranking
公开(公告)号：US20220059375A1
公开(公告)日：2022-02-24
申请号：US16997686
申请日：2020-08-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
IPC: H01L21/67 , H01L21/324 , H01L21/66
Abstract: A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.
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公开(公告)号：US20210189561A1
公开(公告)日：2021-06-24
申请号：US17103761
申请日：2020-11-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Yi-Ming DAI , Yen-Yu CHEN , Hsuan-Chih CHU
IPC: C23C16/455 , C23C16/44 , C23C16/52 , C23C16/458
Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.
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公开(公告)号：US20240392430A1
公开(公告)日：2024-11-28
申请号：US18789424
申请日：2024-07-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.
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公开(公告)号：US20230332322A1
公开(公告)日：2023-10-19
申请号：US18340299
申请日：2023-06-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Zong-Kun LIN , Hsuan-Chih CHU , Chien-Hsun PAN , Yen-Yu CHEN , Yi-Ming DAI
CPC classification number: C25D21/06 , B01D61/18 , B01D63/16 , B01D2311/2642 , B01D2313/18 , B01D2313/22 , B01D2313/44
Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.
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公开(公告)号：US20220406583A1
公开(公告)日：2022-12-22
申请号：US17352133
申请日：2021-06-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Hao CHENG , Hsuan-Chih CHU , Yen-Yu CHEN
Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.
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