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    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210351143A1

    公开(公告)日：2021-11-11

    申请号：US17383215

    申请日：2021-07-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Wen-Hao CHENG ,  Yen-Yu CHEN ,  Chih-Wei LIN ,  Yi-Ming DAI

    IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/522

    Abstract: A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

    METHOD AND SYSTEM FOR DETECTING HOTSPOTS IN SEMICONDUCTOR WAFER
    2.
    发明申请
    METHOD AND SYSTEM FOR DETECTING HOTSPOTS IN SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20180165803A1

    公开(公告)日：2018-06-14

    申请号：US15378482

    申请日：2016-12-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Peng-Ren CHEN ,  Chih-Chiang TU

    IPC: G06T7/00

    CPC classification number: G06T7/0004 ,  G06T2207/30148

    Abstract: Methods and system for detecting hotspots in semiconductor wafer are provided. At least one semiconductor wafer is inspected to detect a plurality of hotspots of each die in the semiconductor wafer, wherein each of the hotspots has defect coordinates in a layout of the die. The hotspots of the dies are stacked in the layout according to the defect coordinates of the hotspots. A common pattern is obtained according to the stacked hotspots corresponding to a location with specific coordinates in the layout. It is determined whether the common pattern is a known pattern having an individual identification (ID) code. A new ID code is assigned to the common pattern when the common pattern is an unknown pattern.

    DEPOSITION SYSTEM AND METHOD
    4.
    发明申请
    DEPOSITION SYSTEM AND METHOD 有权

    公开(公告)号：US20240387156A1

    公开(公告)日：2024-11-21

    申请号：US18789253

    申请日：2024-07-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54

    Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD
    5.
    发明公开
    WORKPIECE PLATING AND RINSE APPARATUS AND METHOD 审中-公开

    公开(公告)号：US20240271314A1

    公开(公告)日：2024-08-15

    申请号：US18167755

    申请日：2023-02-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Zong-Kun LIN

    IPC: C25D21/08 ,  C25D17/02

    CPC classification number: C25D21/08 ,  C25D17/02

    Abstract: The present disclosure is directed to a fluid head that is configured to eject a first fluid (e.g., a liquid state fluid) and a second fluid (e.g., a gaseous state fluid). The fluid head is movable in a rotatable-fashion and a translatable-fashion such that the fluid head may be utilized to increase a speed and decrease a period of time for cleaning and drying a workpiece after an electro-chemical polishing (ECP) process or step. The fluid head may also be utilized to increase a speed and decrease a period of time for beveling an edge of a conductive layer on the workpiece. The present disclosure is also directed to methods for cleaning and drying the workpiece as well as beveling the conductive layer of the workpiece utilizing the fluid head.

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