公开(公告)号：US20230332322A1

公开(公告)日：2023-10-19

申请号：US18340299

申请日：2023-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zong-Kun LIN ,  Hsuan-Chih CHU ,  Chien-Hsun PAN ,  Yen-Yu CHEN ,  Yi-Ming DAI

IPC: C25D21/06 ,  B01D61/18 ,  B01D63/16

CPC classification number: C25D21/06 ,  B01D61/18 ,  B01D63/16 ,  B01D2311/2642 ,  B01D2313/18 ,  B01D2313/22 ,  B01D2313/44

Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

公开(公告)号：US20230352350A1

公开(公告)日：2023-11-02

申请号：US18341506

申请日：2023-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Hsuan-Chih CHU ,  Yen-Yu CHEN ,  Yi-Ming DAI

IPC: H01L21/66 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01L22/26 ,  C23C14/351 ,  C23C14/545 ,  H01J37/32715 ,  H01J37/3455 ,  H01J37/3458

Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

公开(公告)号：US20220336297A1

公开(公告)日：2022-10-20

申请号：US17233263

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Yen-Yu CHEN ,  Yi-Ming DAI

IPC: H01L21/66 ,  H01L21/285 ,  H01L21/67 ,  H01J37/34 ,  G01N23/223 ,  C23C14/54 ,  C23C14/34

Abstract: A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

公开(公告)号：US20200075518A1

公开(公告)日：2020-03-05

申请号：US16430075

申请日：2019-06-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Hao CHENG ,  Yen-Yu CHEN ,  Chih-Wei LIN ,  Yi-Ming DAI

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L21/768 ,  H01L21/56

Abstract: A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.

公开(公告)号：US20210388524A1

公开(公告)日：2021-12-16

申请号：US16901967

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zong-Kun LIN ,  Hsuan-Chih CHU ,  Chien-Hsun PAN ,  Yen-Yu CHEN ,  Yi-Ming DAI

IPC: C25D21/06 ,  B01D61/18 ,  B01D63/16

Abstract: The treatment system provides a feature that may reduce cost of the electrochemical plating process by reusing the virgin makeup solution in the spent electrochemical plating bath. The treatment system provides a rotating filter shaft which receives the spent electrochemical plating bath and captures the additives and by-products created by the additives during the electrochemical plating process. To capture the additives and the by-products, the rotating filter shaft includes one or more types of membranes. Materials such as semi-permeable membrane are used to capture the used additives and by-products in the spent electrochemical plating bath. The treatment system may be equipped with an electrochemical sensor to monitor a level of additives in the filtered electrochemical plating bath.

公开(公告)号：US20210351143A1

公开(公告)日：2021-11-11

申请号：US17383215

申请日：2021-07-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Hao CHENG ,  Yen-Yu CHEN ,  Chih-Wei LIN ,  Yi-Ming DAI

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/522

Abstract: A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

公开(公告)号：US20170123328A1

公开(公告)日：2017-05-04

申请号：US14929098

申请日：2015-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Feng LIAO ,  Chun-Hsien LIN ,  Pei-Yi SU ,  Yi-Ming DAI ,  Chung-Hsing LEE ,  Chien-Ko LIAO ,  Chun-Yung CHANG ,  Nan-Jung CHEN ,  Pei-Yuan WU ,  Hsien-Mao HUANG

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/95

CPC classification number: G03F7/70483 ,  G01N21/8851 ,  G01N21/9501 ,  H01L21/67253 ,  H01L21/67259 ,  H01L22/12

Abstract: A photolithography tool includes at least one process chamber, at least one front opening unified pod (FOUP) stage, at least one moving mechanism, and an image sensor. The moving mechanism is configured to move the wafer from the process chamber to the FOUP stage. The image sensor is configured to capture the image of the wafer on the moving mechanism.

公开(公告)号：US20210189561A1

公开(公告)日：2021-06-24

申请号：US17103761

申请日：2020-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Yi-Ming DAI ,  Yen-Yu CHEN ,  Hsuan-Chih CHU

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/458

Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.

公开(公告)号：US20190164792A1

公开(公告)日：2019-05-30

申请号：US15879651

申请日：2018-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Powen HUANG ,  Yao-Yuan SHANG ,  Kuo-Shu TSENG ,  Yen-Yu CHEN ,  Chun-Chih LIN ,  Yi-Ming DAI

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  H01L21/02 ,  G01D7/00 ,  G01D5/00

Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier using a transportation apparatus. The method further includes measuring an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool positioned on the wafer carrier during the movement of the wafer carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

公开(公告)号：US20190163070A1

公开(公告)日：2019-05-30

申请号：US15877646

申请日：2018-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Yuan SHANG ,  Kuo-Shu TSENG ,  Yen-Yu CHEN ,  Chun-Chih LIN ,  Yi-Ming DAI

IPC: G03F7/20

CPC classification number: G03F7/7085 ,  G03F7/70508 ,  G03F7/70733 ,  G03F7/70883

Abstract: A method for fault detection in a fabrication system is provided. The method includes transferring a reticle carrier containing a reticle from an original position to a destination position. The method further includes detecting environmental condition in the reticle carrier during the transfer of the reticle carrier using a metrology tool that is positioned at the reticle carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.