公开(公告)号：US20200350488A1

公开(公告)日：2020-11-05

申请号：US16935066

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mingyuan SONG ,  Chwen YU ,  Shy-Jay LIN

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10

Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.

公开(公告)号：US20200098407A1

公开(公告)日：2020-03-26

申请号：US16427308

申请日：2019-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wilman TSAI ,  Shy-Jay LIN ,  Mingyuan SONG

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.