公开(公告)号：US09728637B2

公开(公告)日：2017-08-08

申请号：US14080313

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Jung-Chi Jeng ,  I-Chih Chen ,  Wen-Chang Kuo ,  Ying-Hao Chen ,  Ru-Shang Hsiao ,  Chih-Mu Huang

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device also includes a gate over the semiconductor substrate, and the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, and the end portions are over the isolation structure. The semiconductor device further includes a support film over the isolation structure and covering the isolation structure and at least one of the end portions of the gate. The support film exposes the active region and the intermediate portion of the gate.

公开(公告)号：US12218166B2

公开(公告)日：2025-02-04

申请号：US17372888

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Shih-Han Huang

IPC: H01L27/14 ,  H01L27/146

Abstract: A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The conductive structures may bypass a front side of the image sensor. A bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.

公开(公告)号：US20220344383A1

公开(公告)日：2022-10-27

申请号：US17384956

申请日：2021-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Shih-Han Huang

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor having an image sensing element surrounded by a BDTI structure, and an associated method of formation. In some embodiments, a first image sensing element and a second image sensing element are arranged next to one another within an image sensing die. A pixel dielectric stack is disposed along a back of the image sensing die overlying the image sensing elements. The pixel dielectric stack includes a first high-k dielectric layer and a second high-k dielectric layer. The BDTI structure is disposed between the first image sensing element and the second image sensing element and extends from the back of the image sensor die to a position within the image sensor die. The BDTI structure includes a trench filling layer surrounded by an isolation dielectric stack. The pixel dielectric stack has a composition different from that of the isolation dielectric stack.

公开(公告)号：US20220231058A1

公开(公告)日：2022-07-21

申请号：US17327996

申请日：2021-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

IPC: H01L27/146

Abstract: An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.

公开(公告)号：US09812569B2

公开(公告)日：2017-11-07

申请号：US14224961

申请日：2014-03-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Chih Chen ,  Ying-Lang Wang ,  Chih-Mu Huang ,  Ying-Hao Chen ,  Wen-Chang Kuo ,  Jung-Chi Jeng

IPC: H01L29/78 ,  H01L29/167 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66628 ,  H01L29/66636

Abstract: A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate; a source/drain region having a first dopant in the substrate; a barrier layer having a second dopant formed around the source/drain region in the substrate. When a semiconductor device is scaled down, the doped profile in source/drain regions might affect the threshold voltage uniformity, the provided semiconductor device may improve the threshold voltage uniformity by the barrier layer to control the doped profile.