公开(公告)号：US20210305040A1

公开(公告)日：2021-09-30

申请号：US17150403

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Chen KUO ,  Chih-Cheng LIU ,  Ming-Hui WENG ,  Jia-Lin WEI ,  Yen-Yu CHEN ,  Jr-Hung LI ,  Yahru CHENG ,  Chi-Ming YANG ,  Tze-Liang LEE ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

公开(公告)号：US20190043710A1

公开(公告)日：2019-02-07

申请号：US16027680

申请日：2018-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih CHEN ,  Yahru CHENG ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/306 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/3115 ,  H01L21/265 ,  G03F7/16 ,  G03F7/09 ,  G03F7/32 ,  G03F7/38 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and providing a resist solution. The resist solution includes a plurality of first polymers and a plurality of second polymers, each of the first polymers includes a first polymer backbone, and a first acid-labile group (ALG) with a first activation energy bonded to the first polymer backbone. Each of the second polymers includes a second polymer backbone, and a second acid-labile group with a second activation energy bonded to the second polymer backbone, the second activation energy is greater than the first activation energy. The method includes forming a resist layer over the material layer, and the resist layer includes a top portion and a bottom portion, and the first polymers diffuse to the bottom portion, and the second polymers diffuse to the top portion.