公开(公告)号：US10651217B2

公开(公告)日：2020-05-12

申请号：US16391009

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Yi-Hsing Chu ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

IPC: H01L27/146

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

公开(公告)号：US10276616B2

公开(公告)日：2019-04-30

申请号：US15692395

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yin-Chieh Huang ,  Yun-Wei Cheng ,  Yi-Hsing Chu ,  Cheng-Yuan Li ,  Chun-Hao Chou

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

公开(公告)号：US11233082B2

公开(公告)日：2022-01-25

申请号：US16867997

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Yi-Hsing Chu ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

IPC: H01L27/146

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

公开(公告)号：US11177305B2

公开(公告)日：2021-11-16

申请号：US16687620

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/146

Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.

公开(公告)号：US20190148430A1

公开(公告)日：2019-05-16

申请号：US15964353

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsing Chu ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yin-Chieh Huang ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

公开(公告)号：US20180254294A1

公开(公告)日：2018-09-06

申请号：US15448690

申请日：2017-03-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685

Abstract: An isolation structure and a method for fabricating the same are provided. The isolation structure includes a reflective layer, a first dielectric layer and a second dielectric layer. A dielectric constant of the first dielectric layer is different from that of the second dielectric layer. In the method for fabricating the isolation structure, at first, a semiconductor substrate is provided. Then, a first reflective layer is formed on the semiconductor substrate. Thereafter, the first dielectric layer is formed on the reflective layer. Thereafter, the second dielectric layer is on the first dielectric layer. Then, the first reflective layer, the first dielectric layer and the second dielectric layer are etched to form a grid structure. Thereafter, a passivation layer is formed to cover the etched first reflective layer, the etched first dielectric layer and the etched second dielectric layer.

公开(公告)号：US10483310B2

公开(公告)日：2019-11-19

申请号：US15448690

申请日：2017-03-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/146

Abstract: An isolation structure and a method for fabricating the same are provided. The isolation structure includes a reflective layer, a first dielectric layer and a second dielectric layer. A dielectric constant of the first dielectric layer is different from that of the second dielectric layer. In the method for fabricating the isolation structure, at first, a semiconductor substrate is provided. Then, a first reflective layer is formed on the semiconductor substrate. Thereafter, the first dielectric layer is formed on the reflective layer. Thereafter, the second dielectric layer is on the first dielectric layer. Then, the first reflective layer, the first dielectric layer and the second dielectric layer are etched to form a grid structure. Thereafter, a passivation layer is formed to cover the etched first reflective layer, the etched first dielectric layer and the etched second dielectric layer.

公开(公告)号：US20190165029A1

公开(公告)日：2019-05-30

申请号：US15907654

申请日：2018-02-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Yin-Chieh Huang

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.

公开(公告)号：US10269844B2

公开(公告)日：2019-04-23

申请号：US15634148

申请日：2017-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Yi-Hsing Chu ,  Yin-Chieh Huang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

IPC: H01L27/146

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the semiconductor substrate and aligned with the light sensing region. The filter element has a first portion and a second portion, and the first portion is between the second portion and the light sensing region. The light sensing device further includes a light shielding element over the semiconductor substrate and beside the first portion of the filter element. In addition, the light sensing device includes a dielectric element over the light shielding element and beside the second portion of the filter element. A top width of the light shielding element is greater than a bottom width of the dielectric element.

公开(公告)号：US09679939B1

公开(公告)日：2017-06-13

申请号：US15207727

申请日：2016-07-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Yin-Chieh Huang ,  Ching-Chun Wang ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: A backside illuminated (BSI) image sensor device includes a device layer, a doped isolation region and a doped radiation sensing region. The device layer has a front side and a backside, in which the device layer has a thickness greater than or equal to 4 μm. The doped isolation region having a first dopant of a first conductivity is through the device layer to define a plurality of pixel regions of the device layer, in which the doped isolation region includes a first upper region adjacent to the front side and a first lower region between the first upper region and the backside, and the first upper region has a width less than a width of the first lower region. The doped radiation sensing region having a second dopant of a second conductivity opposite to the first conductivity is in one of the pixel regions of the device layer.