Semiconductor structure and method for forming the same

    公开(公告)号:US11456263B2

    公开(公告)日:2022-09-27

    申请号:US16907838

    申请日:2020-06-22

    Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

    REDISTRIBUTION LAYER (RDL) LAYOUTS FOR INTEGRATED CIRCUITS

    公开(公告)号:US20190164924A1

    公开(公告)日:2019-05-30

    申请号:US15965116

    申请日:2018-04-27

    Abstract: Exemplary embodiments for redistribution layers of integrated circuits are disclosed. The redistribution layers of integrated circuits of the present disclosure include one or more arrays of conductive contacts that are configured and arranged to allow a bonding wave to displace air between the redistribution layers during bonding. This configuration and arrangement of the one or more arrays minimize discontinuities, such as pockets of air to provide an example, between the redistribution layers during the bonding.

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