Joint structure in semiconductor package and manufacturing method thereof

    公开(公告)号:US11502056B2

    公开(公告)日:2022-11-15

    申请号:US16924147

    申请日:2020-07-08

    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.

    Semiconductor Device and Method of Forming the Same

    公开(公告)号:US20220359460A1

    公开(公告)日:2022-11-10

    申请号:US17869034

    申请日:2022-07-20

    Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.

    Stacked Integrated Circuit Structure and Method of Forming

    公开(公告)号:US20220246581A1

    公开(公告)日:2022-08-04

    申请号:US17726019

    申请日:2022-04-21

    Abstract: A semiconductor device and a method of forming the device are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

    SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210193538A1

    公开(公告)日:2021-06-24

    申请号:US16920408

    申请日:2020-07-02

    Abstract: A semiconductor structure and a method for fabricating the same are disclosed. A semiconductor structure includes a first substrate, a package, a second substrate, and a lid. The package is attached to a first side of the first substrate. The second substrate is attached to a second side of the first substrate. The lid is connected to the first substrate and the second substrate. The lid includes a ring part over the first side of the first substrate. The ring part and the first substrate define a space and the package is accommodated in the space. The lid further includes a plurality of overhang parts which extend from corner sidewalls of the ring part toward the second substrate to cover corner sidewalls of the first substrate.

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