公开(公告)号：US06927468B2

公开(公告)日：2005-08-09

申请号：US10379915

申请日：2003-03-06

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Junichi Miyamoto ,  Tatsuya Kishi ,  Minoru Amano ,  Takeshi Kajiyama ,  Hisanori Aikawa

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Junichi Miyamoto ,  Tatsuya Kishi ,  Minoru Amano ,  Takeshi Kajiyama ,  Hisanori Aikawa

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/82

CPC分类号： G11C11/16

摘要： A write line is covered with a yoke material. The recording layer of an MTJ element is exchange-coupled to the yoke material. The total magnetic volume ΣMsi×ti of the recording layer of the MTJ element and a portion of the yoke material that is exchange-coupled to the recording layer is smaller than the magnetic volume ΣMsi′×ti′ of the remaining portion of the yoke material that covers the write line.

摘要翻译： 写线用轭材料覆盖。 MTJ元件的记录层与磁轭材料交换耦合。 MTJ元件的记录层的总磁体体积SigmaMsixti和与记录层交换耦合的磁轭材料的一部分小于磁轭材料的剩余部分的磁体积SigmaMsi'xti' 写行。

公开(公告)号：US20080204944A1

公开(公告)日：2008-08-28

申请号：US12100969

申请日：2008-04-10

申请人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： G11B5/33

CPC分类号： G11B5/39

摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。

公开(公告)号：US07277318B2

公开(公告)日：2007-10-02

申请号：US11213855

申请日：2005-08-30

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有其中柱状晶体的生长方向从侧壁的法线方向为30°以下的结构，其中侧壁成为晶粒的结构，其中晶粒沉积成层的结构，或 其中晶粒被无定形沉积的结构。

公开(公告)号：US20050281079A1

公开(公告)日：2005-12-22

申请号：US11213855

申请日：2005-08-30

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 300 or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有如下结构：柱状晶粒的生长方向与侧壁的法线方向成为300°以下，其中晶粒沉积成层的结构或其中晶粒非晶态沉积的结构。

公开(公告)号：US06909130B2

公开(公告)日：2005-06-21

申请号：US10704552

申请日：2003-11-12

申请人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.

摘要翻译： MTJ元件的记录层通过使用高结晶磁性各向异性材料构成。 用于将数据写入MTJ元件的写入线被磁性层覆盖，并且写入布线和磁性层彼此交换耦合。 在与MTJ元件和记录层的记录层相对的部分处的磁性层的磁体积的总和设定为小于任何其它部分的磁性层的磁性体积。

公开(公告)号：US06947314B2

公开(公告)日：2005-09-20

申请号：US10671743

申请日：2003-09-29

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有其中柱状晶体的生长方向从侧壁的法线方向为30°以下的结构，其中晶粒沉积成层的结构或其中晶粒被非晶态沉积的结构。

公开(公告)号：US07190613B2

公开(公告)日：2007-03-13

申请号：US10862617

申请日：2004-06-08

申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

公开(公告)号：US20050018478A1

公开(公告)日：2005-01-27

申请号：US10862617

申请日：2004-06-08

申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

IPC分类号： G06K19/077 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/16

摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

公开(公告)号：US07894246B2

公开(公告)日：2011-02-22

申请号：US12014522

申请日：2008-01-15

申请人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

发明人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

公开(公告)号：US08173447B2

公开(公告)日：2012-05-08

申请号：US12851275

申请日：2010-08-05

申请人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

发明人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC分类号： H01L21/00 ,  H01L2/336 ,  H01L21/20 ,  H01L21/469

CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。