公开(公告)号：US20050289389A1

公开(公告)日：2005-12-29

申请号：US11167187

申请日：2005-06-28

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G06F11/00 ,  G06F12/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US06341085B1

公开(公告)日：2002-01-22

申请号：US09660648

申请日：2000-09-12

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C700

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0659 ,  G06F3/0664 ,  G06F3/0679 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102

摘要： In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be prolonged.

摘要翻译： 在其中以块为单位重写数据的闪存的半导体盘被用作存储介质; 包括存储文件数据的数据存储器的半导体盘，代替数据存储器中的错误块的替代存储器，存储有数据存储器的错误信息的错误存储器以及读出数据的存储器控​​制器 将数据写入数据存储器，替代存储器和错误存储器中并将其擦除。 由于可以补救闪速存储器的写入错误，所以可以延长半导体盘的使用寿命。

公开(公告)号：US07447072B2

公开(公告)日：2008-11-04

申请号：US11599326

申请日：2006-11-15

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C11/34

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20080106939A1

公开(公告)日：2008-05-08

申请号：US12000696

申请日：2007-12-17

申请人： Hajim Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajim Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C16/06 ,  G11C16/16

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US07154805B2

公开(公告)日：2006-12-26

申请号：US11085507

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C8/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US07064995B2

公开(公告)日：2006-06-20

申请号：US11085561

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C11/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US06567334B2

公开(公告)日：2003-05-20

申请号：US10046413

申请日：2002-01-16

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F1204

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US5615151A

公开(公告)日：1997-03-25

申请号：US478334

申请日：1995-06-07

申请人： Takeshi Furuno ,  Yasuhiro Nakamura ,  Akinori Matsuo

发明人： Takeshi Furuno ,  Yasuhiro Nakamura ,  Akinori Matsuo

IPC分类号： G11C17/00 ,  G11C5/14 ,  G11C16/06 ,  G11C8/00

CPC分类号： G11C5/143

摘要： Any one of the internal circuits of a semiconductor integrated circuit is made to operate both at a relatively high operating voltage having a predetermined allowable range and at a relatively low operating voltage also having a predetermined allowable range. The operating voltage is supplied from the outside. Moreover, the operating conditions of the internal circuits constituting the semiconductor integrated circuit are individually set restrictive to the relatively high operating voltage having a predetermined allowable range and to the relatively low operating voltage having a predetermined allowable range. The semiconductor integrated circuit is made to operate selectively at these operating voltages. Since the internal circuits are operated at these two kinds of operating voltages, an arrangement of internal circuits can be simplified and at the same time the semiconductor integrated circuit is usable in not only the conventional system but also a low-voltage one. Moreover, an operating method of the sort that conforms to specifications restrictive to both the relatively high operating voltage as used in the conventional system and the low-voltage system renders extendable a range of uses of such a semiconductor integrated circuit simple in construction.

摘要翻译： 使得半导体集成电路的任何一个内部电路在具有预定允许范围的相对较高的工作电压下工作，并在具有预定允许范围的较低工作电压下工作。 工作电压由外部供电。 此外，构成半导体集成电路的内部电路的工作条件被分别设定为具有预定容许范围的较高工作电压和具有预定容许范围的较低工作电压。 使半导体集成电路在这些工作电压下选择性地工作。 由于内部电路以这两种工作电压工作，所以可以简化内部电路的布置，并且同时半导体集成电路不仅可以用于常规的系统，而且可以用于低电压。 此外，符合规范的规范的操作方法限于常规系统和低压系统中使用的相对较高的工作电压，使得这种半导体集成电路简单结构的使用范围可以扩展。

公开(公告)号：US20100191902A1

公开(公告)日：2010-07-29

申请号：US12748497

申请日：2010-03-29

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US07715243B2

公开(公告)日：2010-05-11

申请号：US12000696

申请日：2007-12-17

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C7/10

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。