公开(公告)号：US07184320B2

公开(公告)日：2007-02-27

申请号：US11167187

申请日：2005-06-28

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C11/34

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US07002851B2

公开(公告)日：2006-02-21

申请号：US11085508

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C7/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20050289389A1

公开(公告)日：2005-12-29

申请号：US11167187

申请日：2005-06-28

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G06F11/00 ,  G06F12/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US06341085B1

公开(公告)日：2002-01-22

申请号：US09660648

申请日：2000-09-12

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C700

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0659 ,  G06F3/0664 ,  G06F3/0679 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102

摘要： In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be prolonged.

摘要翻译： 在其中以块为单位重写数据的闪存的半导体盘被用作存储介质; 包括存储文件数据的数据存储器的半导体盘，代替数据存储器中的错误块的替代存储器，存储有数据存储器的错误信息的错误存储器以及读出数据的存储器控​​制器 将数据写入数据存储器，替代存储器和错误存储器中并将其擦除。 由于可以补救闪速存储器的写入错误，所以可以延长半导体盘的使用寿命。

公开(公告)号：US06275436B1

公开(公告)日：2001-08-14

申请号：US09577371

申请日：2000-05-23

申请人： Tsunehiro Tobita ,  Jun Kitahara ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Ryuichi Hattori ,  Yukihiro Seki ,  Hajime Yamagami ,  Takashi Totsuka ,  Takeshi Wada ,  Yosio Takaya ,  Manabu Saito ,  Kenichi Kaki ,  Takao Okubo ,  Takashi Kikuchi ,  Masamichi Kishi ,  Takeshi Suzuki ,  Shigeru Kadowaki

发明人： Tsunehiro Tobita ,  Jun Kitahara ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Ryuichi Hattori ,  Yukihiro Seki ,  Hajime Yamagami ,  Takashi Totsuka ,  Takeshi Wada ,  Yosio Takaya ,  Manabu Saito ,  Kenichi Kaki ,  Takao Okubo ,  Takashi Kikuchi ,  Masamichi Kishi ,  Takeshi Suzuki ,  Shigeru Kadowaki

IPC分类号： G11C800

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0613 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0656 ,  G06F3/0679 ,  G06F3/068 ,  G06F11/1433 ,  G06F11/1441 ,  G06F12/08 ,  G06F12/0802 ,  G06F12/0866 ,  G06F2003/0694 ,  G06F2212/2022 ,  G06F2212/312 ,  G11C29/789 ,  G11C29/82

摘要： A control method and system when a flash memory is used. as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller comprises control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address. The control section is responsive to the interface information, the first management information, and the second management information for controlling input/output of data from/to the external system and for temporarily storing write data into the first nonvolatile memory from the external system in the volatile memory and then transferring the write data from the volatile memory to the first nonvolatile memory. The consecutive address generation means and the sector address storage means output the physical sector address and the consecutively generated addresses to the first nonvolatile memory and the volatile memory when data at the physical sector address is output from the first nonvolatile memory or when data at the physical sector address is input to the volatile memory.

公开(公告)号：US5243269A

公开(公告)日：1993-09-07

申请号：US797023

申请日：1991-11-25

申请人： Kunihiro Katayama ,  Kenichi Kaki ,  Takashi Tsunehiro

发明人： Kunihiro Katayama ,  Kenichi Kaki ,  Takashi Tsunehiro

IPC分类号： G06F1/26 ,  H02J1/10 ,  H02J7/00 ,  H02J9/06

CPC分类号： H02J7/0024 ,  H02J1/10 ,  H02J9/061 ,  Y10T307/625

摘要： A battery power supply system for supplying DC electric power to a DC operated apparatus includes an AC/DC adapter for converting AC electric power into DC electric power, a plurality of batteries and a battery charger for charging the plurality of batteries. The battery power supply system includes a plurality of charge lines for connecting the battery charger to the plurality of batteries and a plurality of discharge lines connected to outputs of the plurality of batteries. Switches are provided in each of the plurality of charge lines and discharge lines.

摘要翻译： 用于向DC操作的装置提供直流电的电池电源系统包括用于将AC电力转换为DC电力的AC / DC适配器，多个电池和用于对多个电池充电的电池充电器。 电池电源系统包括用于将电池充电器连接到多个电池的多个充电线和连接到多个电池的输出的多个放电线。 开关设置在多个充电线和放电线中的每一个中。

公开(公告)号：US20100191902A1

公开(公告)日：2010-07-29

申请号：US12748497

申请日：2010-03-29

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US07715243B2

公开(公告)日：2010-05-11

申请号：US12000696

申请日：2007-12-17

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C7/10

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US20070070694A1

公开(公告)日：2007-03-29

申请号：US11599308

申请日：2006-11-15

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C14/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20050162900A1

公开(公告)日：2005-07-28

申请号：US11085508

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G11C11/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.