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11.发明授权One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same 有权一次性可编程单元存储单元基于垂直定向的保险丝和二极管以及一次性可编程存储器公开(公告)号：US06567301B2
公开(公告)日：2003-05-20
申请号：US09924500
申请日：2001-08-09
申请人： Thomas C. Anthony , Lung T. Tran
发明人： Thomas C. Anthony , Lung T. Tran
IPC分类号： G11C1136
CPC分类号： G11C17/16
摘要： A one-time programmable unit memory cell includes a vertically oriented fuse and an diode in series. Within the vertically oriented fuse, the current flow is substantially vertical, i.e. perpendicular to the plane of the substrate. Also, the vertically oriented fuse is placed between top and bottom conductors. This vertical placement of the elements helps to increase density of memory devices built using these unit cells. Also, vertically oriented fuses consume very little lateral area, which helps the density even further. The unit memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite because the vertically oriented fuse is left intact. In the written state, the resistance is infinite because the fuse is blown open. The cell may be programmed by applying a critical voltage across the cell enough to cause the fuse to become open. The states are detected by applying a read voltage across the memory cell. If the is not programmed, then a measurable amount flows. Otherwise, no current flows due to the open circuit. A cross-point memory array may be formed with unit memory cells formed at each cross point. With addition of read and write circuitry, the memory array maybe used as memory. However, multiple arrays may be stacked to form high density memory devices.
摘要翻译： 一次性可编程单元存储单元包括垂直取向的熔丝和串联的二极管。 在垂直取向的熔丝内，电流大致垂直于垂直于衬底的平面。 此外，垂直定向的熔断器放置在顶部和底部导体之间。 元件的这种垂直放置有助于增加使用这些单元电池构建的存储器件的密度。 此外，垂直取向的保险丝消耗的横向面积很小，这进一步有助于密度。 单位存储单元具有两种状态，初始状态和写入（编程）状态。 在初始状态下，电池的电阻是有限的，因为垂直取向的保险丝保持原样。 在写入状态下，电阻是无限大的，因为保险丝熔断了。 可以通过在电池上施加足够的临界电压以使熔丝变得开放来对单元进行编程。 通过在存储器单元上施加读取电压来检测状态。 如果没有编程，那么可测量的流量。 否则，由于开路，电流不流动。 交叉点存储器阵列可以形成在每个交叉点处形成的单位存储单元。 通过添加读写电路，存储器阵列可以用作存储器。 然而，可以堆叠多个阵列以形成高密度存储器件。
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公开(公告)号：US07027319B2
公开(公告)日：2006-04-11
申请号：US10465714
申请日：2003-06-19
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an electrical parameter caused by said perturbing hard-axis magnetic field.
摘要翻译： 公开了用于检索存储在磁性集成存储器中的数据的方法和装置。 在一个实施例中，该方法包括将扰动的硬轴磁场施加到磁性集成存储器中的磁性元件，并检测由所述扰动的硬轴磁场引起的电参数的变化。
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13.发明授权Memory device having memory cells with magnetic tunnel junction and tunnel junction in series 失效具有存储单元的存储器件，其具有磁性隧道结和隧道结公开(公告)号：US06473337B1
公开(公告)日：2002-10-29
申请号：US09983404
申请日：2001-10-24
申请人： Lung T. Tran , Manish Sharma , Thomas C. Anthony
发明人： Lung T. Tran , Manish Sharma , Thomas C. Anthony
IPC分类号： G11C1115
CPC分类号： H01L27/222 , G11C11/15
摘要： A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.
摘要翻译： 存储器件包括双隧道结存储器单元，其具有与隧道结串联的磁性隧道结。 在写入操作期间，磁性隧道结可以从第一电阻状态改变到第二电阻状态。 磁性隧道结可以具有与隧道结不同的电阻 - 电压特性，并且不同的电阻 - 电压特性允许磁性隧道结在写入操作期间不会吹动隧道结而被吹动。 磁性隧道结的电阻状态的改变改变了所选择的存储单元的电阻，这在读取操作期间是可检测的。
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公开(公告)号：US06424565B1
公开(公告)日：2002-07-23
申请号：US09561317
申请日：2000-04-28
IPC分类号： G11C1114
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.
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公开(公告)号：US06169686A
公开(公告)日：2001-01-02
申请号：US08974925
申请日：1997-11-20
IPC分类号： G11C1114
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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公开(公告)号：US20130287443A1
公开(公告)日：2013-10-31
申请号：US13459509
申请日：2012-04-30
申请人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
发明人： Quang P. Lam , Michael H. Lee , Omer Gila , Thomas C. Anthony , Seongsik Chang , Paul F. Matheson
IPC分类号： G03G15/02
CPC分类号： G03G15/0233
摘要： Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
摘要翻译： 公开了打印机充电刀片和打印机。 用于打印机的示例性充电刮刀包括以一定角度接触光成像表面的绝缘层，以向光学成像表面施加压力，控制存在于光成像表面上的材料的量的压力，以及附着到 绝缘层的一侧，要被充电的导电层并且向光致成像表面施加第一电荷。
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公开(公告)号：US06947313B2
公开(公告)日：2005-09-20
申请号：US10649076
申请日：2003-08-27
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
摘要翻译： 在磁存储器中耦合导体的方法和装置。 在一些实施例中，存储元件包括：第一磁存储元件，磁耦合到第一磁存储元件的第一组导体，第二磁存储元件，与第二磁存储器元件磁耦合的第二组导体， 第二磁存储元件基本上垂直于第一磁存储元件，并且第一和第二组导体具有至少一个共同的导体。
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公开(公告)号：US06865107B2
公开(公告)日：2005-03-08
申请号：US10601895
申请日：2003-06-23
CPC分类号： G11C11/15
摘要： A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要翻译： 描述了具有多个位单元的磁存储器阵列。 每个位单元包括至少一个具有相应去磁场的具有自由磁极的磁性层。 磁通量吸收层设置在多个位单元中的至少两个位单元之间。
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公开(公告)号：US06794695B2
公开(公告)日：2004-09-21
申请号：US10135241
申请日：2002-04-29
IPC分类号： H01L2976
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译： 公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。 该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。
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公开(公告)号：US06665201B1
公开(公告)日：2003-12-16
申请号：US10202051
申请日：2002-07-24
申请人： Andrew M. Spencer , Thomas C. Anthony , Colin A. Stobbs , Sarah M. Brandenberger , Steven C. Johnson
发明人： Andrew M. Spencer , Thomas C. Anthony , Colin A. Stobbs , Sarah M. Brandenberger , Steven C. Johnson
IPC分类号： G11C1908
CPC分类号： G11C11/005 , G06Q50/22
摘要： The present disclosure relates to a solid-state storage device. In one arrangement, the storage device comprises a memory device comprising one of an atomic resolution storage (ARS) device and a magnetic random access memory (MRAM) device, a controller, and an integral connector that is used to directly connect the storage device to another device.
摘要翻译： 本公开涉及一种固态存储装置。 在一种布置中，存储装置包括存储装置，其包括原子分辨率存储（ARS）装置和磁性随机存取存储器（MRAM）装置，控制器和用于将存储装置直接连接到 另一个设备。
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