Developing method, developing apparatus, and computer-readable storage medium

    公开(公告)号:US09952512B2

    公开(公告)日:2018-04-24

    申请号:US14704200

    申请日:2015-05-05

    CPC classification number: G03F7/32 B05D1/005 G03F7/162 G03F7/3028 H01L21/6715

    Abstract: A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.

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