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公开(公告)号:US09731226B2
公开(公告)日:2017-08-15
申请号:US14378337
申请日:2013-02-22
Applicant: Tokyo Electron Limited
Inventor: Kousuke Yoshihara , Katsunori Ichino , Toshinobu Furusho , Takashi Sasa , Katsuhiro Tsuchiya , Yuichi Terashita , Hirofumi Takeguchi
CPC classification number: B01D19/0063 , B01D19/0031 , B01D19/0068 , G03F7/16 , G03F7/30 , H01L21/6715
Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.
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公开(公告)号:US09690202B2
公开(公告)日:2017-06-27
申请号:US14845827
申请日:2015-09-04
Applicant: TOKYO ELECTRON LIMITED
Inventor: Yuichi Terashita , Hirofumi Takeguchi , Takeshi Shimoaoki , Kousuke Yoshihara , Tomohiro Iseki
CPC classification number: G03F7/3021 , H01L21/6715
Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.
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公开(公告)号:US20180093205A1
公开(公告)日:2018-04-05
申请号:US15818855
申请日:2017-11-21
Applicant: Tokyo Electron Limited
Inventor: Kousuke Yoshihara , Katsunori Ichino , Toshinobu Furusho , Takashi Sasa , Katsuhiro Tsuchiya , Yuichi Terashita , Hirofumi Takeguchi
CPC classification number: B01D19/0063 , B01D19/0031 , B01D19/0068 , G03F7/16 , G03F7/30 , H01L21/6715
Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.
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公开(公告)号:US09256131B2
公开(公告)日:2016-02-09
申请号:US14452929
申请日:2014-08-06
Applicant: TOKYO ELECTRON LIMITED
Inventor: Hirofumi Takeguchi , Taro Yamamoto , Kousuke Yoshihara
CPC classification number: G03F7/162 , G03F7/3021
Abstract: A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.
Abstract translation: 一种显影方法,其包括显影步骤,其中当由旋转卡盘水平保持的晶片正在旋转时,通过将显影剂供应到晶片的表面上来显影晶片,其中在显影步骤之前提供预润湿步骤 其中与来自位于旋转晶片表面的中心附近的位置的第一喷嘴一起供给显影剂,作为第二液体的去离子水从位于位置上的第二喷嘴供给 比第一喷嘴更靠近晶片的外周部分,从而通过由去离子水流到晶片的外周侧而形成的壁沿着晶片的旋转方向展开显影剂 晶圆。
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公开(公告)号:US20150000517A1
公开(公告)日:2015-01-01
申请号:US14378337
申请日:2013-02-22
Applicant: Tokyo Electron Limited
Inventor: Kousuke Yoshihara , Katsunori Ichino , Toshinobu Furusho , Takashi Sasa , Katsuhiro Tsuchiya , Yuichi Terashita , Hirofumi Takeguchi
IPC: B01D19/00
CPC classification number: B01D19/0063 , B01D19/0031 , B01D19/0068 , G03F7/16 , G03F7/30 , H01L21/6715
Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.
Abstract translation: 一种与供给处理溶液供给到基板的供给喷嘴连接的固溶处理装置,具备:将处理液储存容器与供给喷嘴连接的供给管路; 设置在所述供给管道中的过滤装置; 过滤装置的二次侧的泵; 连接泵的排出侧和过滤装置的进气侧的循环管路; 供给控制阀,其设置在所述供给管路中的所述泵的次级侧; 设置在循环管道中的循环控制阀; 以及控制单元,其中,当通过关闭所述供给控制阀来停止从所述供给喷嘴向所述基板供给所述处理液时,所述控制单元打开所述循环控制阀并驱动所述泵,从而使所述处理液在所述供给管线 具有过滤装置和循环管道。
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公开(公告)号:US11769661B2
公开(公告)日:2023-09-26
申请号:US16881306
申请日:2020-05-22
Applicant: Tokyo Electron Limited
Inventor: Hirofumi Takeguchi , Kazuyoshi Shinohara , Takahisa Otsuka , Suguen Lee
IPC: H01L21/02 , H01L21/67 , H01L21/687 , B08B3/08 , B08B3/10
CPC classification number: H01L21/02057 , B08B3/08 , B08B3/10 , H01L21/67051 , H01L21/68764 , B08B2203/005 , B08B2203/007
Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.
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公开(公告)号:US10901320B2
公开(公告)日:2021-01-26
申请号:US16124328
申请日:2018-09-07
Applicant: TOKYO ELECTRON LIMITED
Inventor: Tomohiro Iseki , Hirofumi Takeguchi , Yuichi Terashita
Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.
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公开(公告)号:US10022652B2
公开(公告)日:2018-07-17
申请号:US15818855
申请日:2017-11-21
Applicant: Tokyo Electron Limited
Inventor: Kousuke Yoshihara , Katsunori Ichino , Toshinobu Furusho , Takashi Sasa , Katsuhiro Tsuchiya , Yuichi Terashita , Hirofumi Takeguchi
Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.
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公开(公告)号:US20200381245A1
公开(公告)日:2020-12-03
申请号:US16881306
申请日:2020-05-22
Applicant: Tokyo Electron Limited
Inventor: Hirofumi Takeguchi , Kazuyoshi Shinohara , Takahisa Otsuka , Suguen Lee
IPC: H01L21/02 , H01L21/67 , H01L21/687 , B08B3/10 , B08B3/08
Abstract: A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.
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公开(公告)号:US10120286B2
公开(公告)日:2018-11-06
申请号:US14802810
申请日:2015-07-17
Applicant: TOKYO ELECTRON LIMITED
Inventor: Tomohiro Iseki , Hirofumi Takeguchi , Yuichi Terashita
Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.
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