公开(公告)号：US11894249B2

公开(公告)日：2024-02-06

申请号：US17031785

申请日：2020-09-24

Applicant: Tokyo Electron Limited

Inventor： Masami Oikawa ,  Tsubasa Watanabe ,  Tomoya Hasegawa

IPC: H01L21/67 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/67248 ,  C23C16/4405 ,  H01J37/32522 ,  H01J37/32798 ,  H01J37/32862 ,  H01L21/67253

Abstract: A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.

公开(公告)号：US11486041B2

公开(公告)日：2022-11-01

申请号：US17065355

申请日：2020-10-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami Oikawa

IPC: C23C16/40 ,  C23C16/52 ,  C23C16/458 ,  C23C16/455

Abstract: A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.

公开(公告)号：USD789310S1

公开(公告)日：2017-06-13

申请号：US29525559

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Designer： Yoshinori Kusakabe ,  Masami Oikawa

公开(公告)号：USD772183S1

公开(公告)日：2016-11-22

申请号：US29525561

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Designer： Yoshinori Kusakabe ,  Masami Oikawa