公开(公告)号：US12020909B2

公开(公告)日：2024-06-25

申请号：US18188095

申请日：2023-03-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC分类号： H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32798

摘要： A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

公开(公告)号：US09809039B2

公开(公告)日：2017-11-07

申请号：US15276165

申请日：2016-09-26

申请人： OCE-TECHNOLOGIES B.V.

发明人： Guido G. Willems ,  Hermanus M. Kuypers

IPC分类号： B41F23/00 ,  B41J11/00 ,  H05H1/24 ,  H01J37/32

CPC分类号： B41J11/002 ,  B41F23/00 ,  B41J11/0015 ,  H01J37/32568 ,  H01J37/32761 ,  H01J37/32798 ,  H01J2237/002 ,  H05H1/2406 ,  H05H2001/2412

摘要： A plasma generating device includes a first plasma electrode and a counter electrode facing each other. The first plasma electrode extends in a lateral direction and includes two projections. Each of the two projections protrudes from the first plasma electrode in the direction of the counter electrode over a predetermined distance. The plasma generating device further includes a preload mechanism adapted for urging each of said two projections of the first plasma electrode against the counter electrode. The two projections cooperatively define a plasma gap between the first plasma electrode and the counter electrode. The counter electrode includes a support surface facing said plasma gap. The support surface is substantially flat along the plasma gap.

公开(公告)号：US20170207067A1

公开(公告)日：2017-07-20

申请号：US15402648

申请日：2017-01-10

申请人： Robert Bosch GmbH

发明人： Arnd Kaelberer ,  Christian Zielke ,  Hans Artmann ,  Oliver Breitschaedel ,  Peter Borwin Staffeld

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32798 ,  H01J2237/334

摘要： An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode.

公开(公告)号：US09048268B2

公开(公告)日：2015-06-02

申请号：US13785172

申请日：2013-03-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Mu-Chen Chen ,  Yi-Tse Huang ,  Wei-Fan Liao ,  Han-Ti Hsiaw ,  Chia-I Shen

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/312 ,  H01L21/322 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/67069 ,  H01J37/32339 ,  H01J37/32724 ,  H01J37/32798 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/0209 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/312 ,  H01L21/3225 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/76807 ,  H01L21/76814

摘要： A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.

摘要翻译： 一种除去光致抗蚀剂残渣的方法包括在制造半导体器件期间蚀刻设置在半导体衬底的前侧上的光致抗蚀剂层，并将半导体衬底的前侧和后侧中的至少一个暴露于包含活性氧的气氛 。 该方法还包括用清洁液清洗半导体衬底的前侧和后侧中的至少一个。

公开(公告)号：US20140138029A1

公开(公告)日：2014-05-22

申请号：US14130901

申请日：2012-06-06

申请人： Kenji Narita ,  Wataru Sanematsu

发明人： Kenji Narita ,  Wataru Sanematsu

IPC分类号： H01J37/32

CPC分类号： H01J37/32798 ,  A45D27/46 ,  A45D27/48 ,  B08B7/00 ,  B09B3/0083 ,  C02F1/48 ,  C02F1/50 ,  C02F1/72 ,  C02F1/78 ,  H01J37/32018 ,  H05H1/2406 ,  H05H2001/2412

摘要： A cleaning and purifying apparatus 40 detects an abnormal event that occurs during use of the plasma generator 1 and controls plasma discharge based on the result of detection.

摘要翻译： 清洁和净化装置40检测在等离子体发生器1的使用期间发生的异常事件，并且基于检测结果控制等离子体放电。

公开(公告)号：US11955321B2

公开(公告)日：2024-04-09

申请号：US17227934

申请日：2021-04-12

申请人： NOVA PLASMA LTD.

发明人： Amnon Lam ,  Aviad Harhol ,  Eliezer Fuchs ,  Chen Porat

IPC分类号： A61L27/18 ,  A61L27/50 ,  A61L27/54 ,  H01J37/32

CPC分类号： H01J37/32798 ,  A61L27/18 ,  A61L27/50 ,  A61L27/54 ,  H01J37/321 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  A61L2300/406 ,  A61L2400/18 ,  A61L2430/04 ,  H01J37/32091 ,  H01J37/32348 ,  A61L27/18 ,  C08L83/04

摘要： An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided.

公开(公告)号：US20180269070A1

公开(公告)日：2018-09-20

申请号：US15458292

申请日：2017-03-14

申请人： Lam Research Corporation

发明人： Kwame Eason ,  Dengliang Yang ,  Pilyeon Park ,  Faisal Yaqoob ,  Joon Hong Park ,  Mark Kawaguchi ,  Ivelin Angelov ,  Ji Zhu ,  Hsiao-Wei Chang

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/8234 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32798 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/334 ,  H01L21/823431

摘要： A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

公开(公告)号：US20180245218A1

公开(公告)日：2018-08-30

申请号：US15896366

申请日：2018-02-14

申请人： TOKYO ELECTRON LIMITED

发明人： Hitoshi KATO

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/673 ,  C23C16/452 ,  C23C16/458 ,  C23C16/40

CPC分类号： C23C16/45548 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32798 ,  H01L21/67376 ,  H01L21/68764 ,  H01L21/68771

摘要： A film forming apparatus includes: first and second processing gas supply parts configured to supply first and second processing gases, respectively; a plasma-generating gas supply part configured to supply a plasma-generating gas; a plasma forming part configured to convert the plasma-generating gas into plasma; a receiving vessel inserted into an opening formed in a ceiling portion of a vacuum vessel, the receiving vessel having a bottom surface portion facing a rotary table and being engaged with the plasma forming part on an upper surface of the bottom surface portion; a dielectric shield member arranged between the receiving vessel and an inner peripheral surface of the opening; a height adjustment part configured to adjust an arrangement height position of the bottom surface portion; and one or more sealing parts configured to hermetically close a space between the vacuum vessel and the receiving vessel.

公开(公告)号：US20180138022A1

公开(公告)日：2018-05-17

申请号：US15572454

申请日：2016-05-11

申请人： NOVA PLASMA LTD.

发明人： Amnon LAM ,  Aviad HARHOL ,  Eliezer FUCHS ,  Chen PORAT

IPC分类号： H01J37/32 ,  A61L27/18 ,  A61L27/54 ,  A61L27/50

CPC分类号： H01J37/32798 ,  A61L27/18 ,  A61L27/50 ,  A61L27/54 ,  A61L2300/406 ,  A61L2400/18 ,  A61L2430/04 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32348 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  C08L83/04

摘要： An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided.

公开(公告)号：US20170283940A1

公开(公告)日：2017-10-05

申请号：US15507920

申请日：2016-06-10

申请人： ULVAC, INC.

发明人： Shinya Nakamura ,  Yoshinori Fujii

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/081 ,  C23C14/35 ,  C23C14/52 ,  C23C14/54 ,  G01L13/00 ,  H01J37/32798 ,  H01J37/32816 ,  H01J37/34

摘要： A method of discriminating a state of a sputtering apparatus in which, by sputtering a target (2), a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.