公开(公告)号：US20200006092A1

公开(公告)日：2020-01-02

申请号：US16452895

申请日：2019-06-26

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Yoshinori Ikeda

IPC: H01L21/67 ,  H01L21/673 ,  B05B1/28

Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

公开(公告)号：US12255081B2

公开(公告)日：2025-03-18

申请号：US17657821

申请日：2022-04-04

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hayashi ,  Hiroaki Inadomi ,  Shota Umezaki ,  Suguru Enokida ,  Kouji Kimoto

IPC: H01L21/67 ,  B08B3/08 ,  B08B13/00 ,  H01L21/02 ,  H01L21/677

Abstract: A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.

公开(公告)号：US20220208567A1

公开(公告)日：2022-06-30

申请号：US17645779

申请日：2021-12-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

公开(公告)号：US11373883B2

公开(公告)日：2022-06-28

申请号：US16452895

申请日：2019-06-26

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Yoshinori Ikeda

IPC: H01L21/67 ,  B05B1/28 ,  H01L21/673 ,  B05D3/04 ,  C23C16/44 ,  C23C16/455 ,  F26B21/02

Abstract: A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

公开(公告)号：US20190355593A1

公开(公告)日：2019-11-21

申请号：US16407245

申请日：2019-05-09

Applicant: Tokyo Electron Limited

Inventor： Yoshinori Ikeda ,  Shota Umezaki ,  Kenji Nishi

IPC: H01L21/67 ,  B05B15/555 ,  H01L21/02

Abstract: A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holder, a top plate portion, a gas supply unit, and an arm. The substrate holder holds a substrate. The top plate is installed to face the substrate held on the substrate holder, and has a through hole formed therethrough at a position facing the center of the substrate. The gas supply supplies an atmosphere adjustment gas to a space between the substrate holder and the top plate. The processing liquid nozzle ejects a liquid to the substrate. The arm holds the processing liquid nozzle and moves the processing liquid nozzle between a processing position where the processing liquid is ejected from the processing liquid nozzle through the through hole and a standby position outside the substrate.