公开(公告)号：US10851468B2

公开(公告)日：2020-12-01

申请号：US15458327

申请日：2017-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi Iino ,  Toru Ihara ,  Yoshihiro Kai ,  Yoichi Tokunaga

IPC: C25D17/08 ,  H01L21/687 ,  H01L21/67 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  H01L21/288 ,  H01L21/677

Abstract: A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

公开(公告)号：US09120120B2

公开(公告)日：2015-09-01

申请号：US14460020

申请日：2014-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Yamamoto ,  Naoto Yoshitaka ,  Shuichi Nishikido ,  Yoichi Tokunaga

IPC: B08B3/00 ,  B05D3/10 ,  G03F7/16 ,  H01L21/67 ,  B05D3/06 ,  B05D5/06

CPC classification number: B05D3/105 ,  B05D3/065 ,  B05D5/06 ,  G03F7/168 ,  H01L21/67046 ,  H01L21/67051

Abstract: A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.

Abstract translation: 清洁装置包括：第一基板保持部，其构造成保持基板的背面的第一区域，使得顶表面保持朝上; 第二基板保持部构造成保持基板的背面的第二区域，第二区域不与第一区域重叠，并旋转基板; 顶表面清洁喷嘴，其构造成将顶表面清洁流体供应到所述基板的顶表面; 斜面清洁喷嘴，其构造成将倾斜清洁流体供应到所述基板的斜面部分; 清洗液供给部，其构造成将后表面清洗液供给到由所述第一或第二基板保持部保持的基板的背面; 以及清洁部件，其构造成清洁由所述第一或第二基板保持部保持的所述基板的背面。

公开(公告)号：US08828183B2

公开(公告)日：2014-09-09

申请号：US13727671

申请日：2012-12-27

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract translation: 基板处理装置包括：基板保持单元，被配置为保持基板; 第一处理液喷嘴，被配置为将第一处理液体供应到所述基板的周边部分; 第二处理液喷嘴，被配置为将温度低于第一处理液的第二处理液供给到基板的周边部分; 第一气体供给口，其构造成将第一温度的第一气体供给到所述基板的周边部的第一供气位置; 以及第二气体供给口，被配置为相对于与所述基板相对于所述第一气体供给位置，在比所述第一温度低的第二温度向所述径向中心附近供给第二气体。