公开(公告)号：US20240136423A1

公开(公告)日：2024-04-25

申请号：US18395657

申请日：2023-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20210118889A1

公开(公告)日：2021-04-22

申请号：US17134193

申请日：2020-12-25

Applicant: UNITED MICROELECTRONICS CORP. ,  Fujian Jinhua Integrated Circuit Co., Ltd.

Inventor： Wei-Lun Hsu ,  Hung-Lin Shih ,  Che-Hung Huang ,  Ping-Cheng Hsu ,  Hsu-Yang Wang

IPC: H01L27/108 ,  H01L21/768 ,  H01L21/762

Abstract: A method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; forming a conductive layer in the trench; forming a metal layer on the conductive layer; forming a mask layer on the metal layer; and patterning the mask layer, the metal layer, and the conductive layer to form a bit line structure.

公开(公告)号：US20190279989A1

公开(公告)日：2019-09-12

申请号：US15943721

申请日：2018-04-03

Applicant: UNITED MICROELECTRONICS CORP. ,  Fujian Jinhua Integrated Circuit Co., Ltd.

Inventor： Wei-Lun Hsu ,  Hung-Lin Shih ,  Che-Hung Huang ,  Ping-Cheng Hsu ,  Hsu-Yang Wang

IPC: H01L27/108 ,  H01L21/762 ,  H01L21/768

Abstract: According to an embodiment of the present invention, a method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; and forming a bit line structure in the trench.

公开(公告)号：US20230378314A1

公开(公告)日：2023-11-23

申请号：US18221404

申请日：2023-07-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/7783 ,  H01L29/2003

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US11749740B2

公开(公告)日：2023-09-05

申请号：US16731058

申请日：2019-12-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7783

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US20210111267A1

公开(公告)日：2021-04-15

申请号：US16666414

申请日：2019-10-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20180269107A1

公开(公告)日：2018-09-20

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.

公开(公告)号：US10079180B1

公开(公告)日：2018-09-18

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/76 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.

公开(公告)号：US20240128353A1

公开(公告)日：2024-04-18

申请号：US18395654

申请日：2023-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US11894441B2

公开(公告)日：2024-02-06

申请号：US17745841

申请日：2022-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.