公开(公告)号：US20200006517A1

公开(公告)日：2020-01-02

申请号：US16053665

申请日：2018-08-02

Applicant: United Microelectronics Corp.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Cheng-Chia Liu ,  Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Chih-Chiang Wu ,  Ti-Bin Chen ,  Ching-Chu Tseng

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/31

Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.

公开(公告)号：US20180269107A1

公开(公告)日：2018-09-20

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.

公开(公告)号：US10079180B1

公开(公告)日：2018-09-18

申请号：US15458038

申请日：2017-03-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yat-Kai Sun ,  Chao-Nan Chen ,  Hung-Lin Shih ,  Che-Hung Huang ,  Wei-Lun Hsu ,  Cheng-Chia Liu

IPC: H01L21/76 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.